Grandjean N - Search Results

1

Kinetics of surfactant-mediated epitaxy of III-V semiconductors.

Grandjean N, Massies J. Grandjean N, et al. Phys Rev B Condens Matter. 1996 May 15;53(20):R13231-R13234. doi: 10.1103/physrevb.53.r13231. Phys Rev B Condens Matter. 1996. PMID: 9983154 No abstract available.

2

Surfactant effect on the surface diffusion length in epitaxial growth.

Massies J, Grandjean N. Massies J, et al. Among authors: grandjean n. Phys Rev B Condens Matter. 1993 Sep 15;48(11):8502-8505. doi: 10.1103/physrevb.48.8502. Phys Rev B Condens Matter. 1993. PMID: 10007060 No abstract available.

3

Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy.

Leymarie J, Monier C, Vasson A, Leroux M, Courboulès B, Grandjean N, Deparis C, Massies J. Leymarie J, et al. Among authors: grandjean n. Phys Rev B Condens Matter. 1995 May 15;51(19):13274-13280. doi: 10.1103/physrevb.51.13274. Phys Rev B Condens Matter. 1995. PMID: 9978130 No abstract available.

4

Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001).

Grandjean N, Massies J, Leroux M. Grandjean N, et al. Phys Rev B Condens Matter. 1996 Jan 15;53(3):998-1001. doi: 10.1103/physrevb.53.998. Phys Rev B Condens Matter. 1996. PMID: 9983539 No abstract available.

5

Confined electron states in ultrathin AlAs single quantum wells under pressure.

Leroux M, Grandjean N, Chastaingt B, Deparis C, Neu G, Massies J. Leroux M, et al. Among authors: grandjean n. Phys Rev B Condens Matter. 1992 May 15;45(20):11846-11853. doi: 10.1103/physrevb.45.11846. Phys Rev B Condens Matter. 1992. PMID: 10001200 No abstract available.

6

Photoluminescence under pressure of ultrathin AlAs layers grown on GaAs vicinal surfaces: A search for lateral confinement effects.

Chastaingt B, Leroux M, Neu G, Grandjean N, Deparis C, Massies J. Chastaingt B, et al. Among authors: grandjean n. Phys Rev B Condens Matter. 1993 Jan 15;47(3):1292-1298. doi: 10.1103/physrevb.47.1292. Phys Rev B Condens Matter. 1993. PMID: 10006138 No abstract available.

7

Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers.

Grandjean N, Massies J, Etgens VH. Grandjean N, et al. Phys Rev Lett. 1992 Aug 3;69(5):796-799. doi: 10.1103/PhysRevLett.69.796. Phys Rev Lett. 1992. PMID: 10047035 No abstract available.

8

Grandjean and Massies reply.

Grandjean N, Massies J. Grandjean N, et al. Phys Rev Lett. 1993 Feb 15;70(7):1031. doi: 10.1103/PhysRevLett.70.1031. Phys Rev Lett. 1993. PMID: 10054267 No abstract available.

9

Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials.

Massies J, Grandjean N. Massies J, et al. Among authors: grandjean n. Phys Rev Lett. 1993 Aug 30;71(9):1411-1414. doi: 10.1103/PhysRevLett.71.1411. Phys Rev Lett. 1993. PMID: 10055533 No abstract available.

10

Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical microscopy.

Gucciardi PG, Vinattieri A, Colocci M, Damilano B, Grandjean N, Semond F, Massies J. Gucciardi PG, et al. Among authors: grandjean n. J Microsc. 2001 Apr;202(Pt 1):212-7. doi: 10.1046/j.1365-2818.2001.00822.x. J Microsc. 2001. PMID: 11298895

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