Massies J - Search Results

1

Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy.

Leymarie J, Monier C, Vasson A, Leroux M, Courboulès B, Grandjean N, Deparis C, Massies J. Leymarie J, et al. Among authors: massies j. Phys Rev B Condens Matter. 1995 May 15;51(19):13274-13280. doi: 10.1103/physrevb.51.13274. Phys Rev B Condens Matter. 1995. PMID: 9978130 No abstract available.

2

Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001).

Grandjean N, Massies J, Leroux M. Grandjean N, et al. Among authors: massies j. Phys Rev B Condens Matter. 1996 Jan 15;53(3):998-1001. doi: 10.1103/physrevb.53.998. Phys Rev B Condens Matter. 1996. PMID: 9983539 No abstract available.

3

Confined electron states in ultrathin AlAs single quantum wells under pressure.

Leroux M, Grandjean N, Chastaingt B, Deparis C, Neu G, Massies J. Leroux M, et al. Among authors: massies j. Phys Rev B Condens Matter. 1992 May 15;45(20):11846-11853. doi: 10.1103/physrevb.45.11846. Phys Rev B Condens Matter. 1992. PMID: 10001200 No abstract available.

4

Photoluminescence under pressure of ultrathin AlAs layers grown on GaAs vicinal surfaces: A search for lateral confinement effects.

Chastaingt B, Leroux M, Neu G, Grandjean N, Deparis C, Massies J. Chastaingt B, et al. Among authors: massies j. Phys Rev B Condens Matter. 1993 Jan 15;47(3):1292-1298. doi: 10.1103/physrevb.47.1292. Phys Rev B Condens Matter. 1993. PMID: 10006138 No abstract available.

5

Kinetics of surfactant-mediated epitaxy of III-V semiconductors.

Grandjean N, Massies J. Grandjean N, et al. Among authors: massies j. Phys Rev B Condens Matter. 1996 May 15;53(20):R13231-R13234. doi: 10.1103/physrevb.53.r13231. Phys Rev B Condens Matter. 1996. PMID: 9983154 No abstract available.

6

Magneto-optics of narrow GaAs/AlxGa1-xAs quantum wells grown on vicinal substrates.

Meseguer F, Mestres N, Sánchez-Dehesa J, Deparis C, Neu G, Massies J. Meseguer F, et al. Among authors: massies j. Phys Rev B Condens Matter. 1992 Mar 15;45(12):6942-6945. doi: 10.1103/physrevb.45.6942. Phys Rev B Condens Matter. 1992. PMID: 10000460 No abstract available.

7

Exciton delocalization in thin double-barrier GaAs/AlAs/(Al,Ga)As quantum-well structures.

Martinez-Pastor J, Gurioli M, Colocci M, Deparis C, Chastaingt B, Massies J. Martinez-Pastor J, et al. Among authors: massies j. Phys Rev B Condens Matter. 1992 Jul 15;46(4):2239-2243. doi: 10.1103/physrevb.46.2239. Phys Rev B Condens Matter. 1992. PMID: 10003899 No abstract available.

8

Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells.

Gil B, Lefebvre P, Bonnel P, Mathieu H, Deparis C, Massies J, Neu G, Chen Y. Gil B, et al. Among authors: massies j. Phys Rev B Condens Matter. 1993 Jan 15;47(4):1954-1960. doi: 10.1103/physrevb.47.1954. Phys Rev B Condens Matter. 1993. PMID: 10006231 No abstract available.

9

Surfactant effect on the surface diffusion length in epitaxial growth.

Massies J, Grandjean N. Massies J, et al. Phys Rev B Condens Matter. 1993 Sep 15;48(11):8502-8505. doi: 10.1103/physrevb.48.8502. Phys Rev B Condens Matter. 1993. PMID: 10007060 No abstract available.

10

Reflectance study of interwell couplings in GaAs-Ga1-xAlxAs double quantum wells.

Bonnel P, Lefebvre P, Gil B, Mathieu H, Deparis C, Massies J, Neu G, Chen Y. Bonnel P, et al. Among authors: massies j. Phys Rev B Condens Matter. 1990 Aug 15;42(6):3435-3443. doi: 10.1103/physrevb.42.3435. Phys Rev B Condens Matter. 1990. PMID: 9995857 No abstract available.

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