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Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime.
Ferreira AC, Holtz PO, Sernelius BE, Buyanova I I, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Ferreira AC, et al. Among authors: gossard ac. Phys Rev B Condens Matter. 1996 Dec 15;54(23):16989-16993. doi: 10.1103/physrevb.54.16989. Phys Rev B Condens Matter. 1996. PMID: 9985829 No abstract available.
Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells.
Ferreira AC, Holtz PO, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC. Ferreira AC, et al. Among authors: gossard ac. Phys Rev B Condens Matter. 1996 Dec 15;54(23):16994-16997. doi: 10.1103/physrevb.54.16994. Phys Rev B Condens Matter. 1996. PMID: 9985830 No abstract available.
250 results