Choi MS - Search Results

1

Correction to "Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides".

Kim C, Moon I, Lee D, Choi MS, Ahmed F, Nam S, Cho Y, Shin HJ, Park S, Yoo WJ. Kim C, et al. Among authors: choi ms. ACS Nano. 2025 Feb 4;19(4):5043. doi: 10.1021/acsnano.4c18850. Epub 2025 Jan 25. ACS Nano. 2025. PMID: 39862203 No abstract available.

2

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.

Kim C, Moon I, Lee D, Choi MS, Ahmed F, Nam S, Cho Y, Shin HJ, Park S, Yoo WJ. Kim C, et al. Among authors: choi ms. ACS Nano. 2017 Feb 28;11(2):1588-1596. doi: 10.1021/acsnano.6b07159. Epub 2017 Jan 23. ACS Nano. 2017. PMID: 28088846

3

Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.

Choi MS, Qu D, Lee D, Liu X, Watanabe K, Taniguchi T, Yoo WJ. Choi MS, et al. ACS Nano. 2014 Sep 23;8(9):9332-40. doi: 10.1021/nn503284n. Epub 2014 Aug 19. ACS Nano. 2014. PMID: 25131298

4

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J. Lee GH, et al. Among authors: choi ms. ACS Nano. 2013 Sep 24;7(9):7931-6. doi: 10.1021/nn402954e. Epub 2013 Aug 14. ACS Nano. 2013. PMID: 23924287

5

Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping.

Ngo TD, Huynh T, Moon I, Taniguchi T, Watanabe K, Choi MS, Yoo WJ. Ngo TD, et al. Among authors: choi ms. Nano Lett. 2023 Dec 13;23(23):11345-11352. doi: 10.1021/acs.nanolett.3c04009. Epub 2023 Nov 20. Nano Lett. 2023. PMID: 37983163

6

P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic Electrodes.

Park H, Shin H, Ali N, Choi H, Kim BSY, Kang B, Choi MS, Yoo WJ. Park H, et al. Among authors: choi ms. Nano Lett. 2025 Jan 8;25(1):368-375. doi: 10.1021/acs.nanolett.4c05136. Epub 2024 Dec 23. Nano Lett. 2025. PMID: 39714202

7

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects.

Liu X, Choi MS, Hwang E, Yoo WJ, Sun J. Liu X, et al. Among authors: choi ms. Adv Mater. 2022 Apr;34(15):e2108425. doi: 10.1002/adma.202108425. Epub 2022 Feb 25. Adv Mater. 2022. PMID: 34913205 Review.

8

Modulation of Contact Resistance of Dual-Gated MoS₂ FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts.

Ngo TD, Huynh T, Jung H, Ali F, Jeon J, Choi MS, Yoo WJ. Ngo TD, et al. Among authors: choi ms. Adv Sci (Weinh). 2023 Jul;10(21):e2301400. doi: 10.1002/advs.202301400. Epub 2023 May 5. Adv Sci (Weinh). 2023. PMID: 37144526 Free PMC article.

9

Carrier transport at the metal-MoS2 interface.

Ahmed F, Choi MS, Liu X, Yoo WJ. Ahmed F, et al. Among authors: choi ms. Nanoscale. 2015 May 28;7(20):9222-8. doi: 10.1039/c5nr01044f. Epub 2015 Apr 30. Nanoscale. 2015. PMID: 25927942

10

Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs.

Huynh T, Ngo TD, Choi H, Choi M, Lee W, Nguyen TD, Tran TT, Lee K, Hwang JY, Kim J, Yoo WJ. Huynh T, et al. ACS Appl Mater Interfaces. 2024 Jan 24;16(3):3694-3702. doi: 10.1021/acsami.3c16229. Epub 2024 Jan 12. ACS Appl Mater Interfaces. 2024. PMID: 38214703

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