Ti3 C2 Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors.
Wang C, Xu X, Tyagi S, Rout PC, Schwingenschlögl U, Sarkar B, Khandelwal V, Liu X, Gao L, Hedhili MN, Alshareef HN, Li X.
Wang C, et al. Among authors: khandelwal v.
Adv Mater. 2023 Jun;35(22):e2211738. doi: 10.1002/adma.202211738. Epub 2023 Apr 6.
Adv Mater. 2023.
PMID: 36942383