Yu ZG - Search Results

1

Impact of grain boundaries on the electronic properties and Schottky barrier height in MoS₂@Au heterojunctions.

Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW. Sorkin V, et al. Among authors: yu zg. Phys Chem Chem Phys. 2025 Jan 2;27(2):905-914. doi: 10.1039/d4cp03686g. Phys Chem Chem Phys. 2025. PMID: 39663946

2

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study.

Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW. Sorkin V, et al. Among authors: yu zg. Sci Rep. 2022 Oct 26;12(1):18001. doi: 10.1038/s41598-022-22913-7. Sci Rep. 2022. PMID: 36289283 Free PMC article.

3

An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor Heterojunctions.

Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW. Sorkin V, et al. Among authors: yu zg. ACS Appl Mater Interfaces. 2024 May 1;16(17):22166-22176. doi: 10.1021/acsami.4c02294. Epub 2024 Apr 22. ACS Appl Mater Interfaces. 2024. PMID: 38648115

4

Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study.

Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW. Sorkin V, et al. Among authors: yu zg. Sci Rep. 2022 Dec 6;12(1):21086. doi: 10.1038/s41598-022-25621-4. Sci Rep. 2022. PMID: 36473911 Free PMC article. No abstract available.

5

Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2.

Yu ZG, Cai Y, Zhang YW. Yu ZG, et al. Sci Rep. 2015 Sep 8;5:13783. doi: 10.1038/srep13783. Sci Rep. 2015. PMID: 26348670 Free PMC article.

6

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2.

Yu ZG, Zhang YW, Yakobson BI. Yu ZG, et al. Nano Lett. 2015 Oct 14;15(10):6855-61. doi: 10.1021/acs.nanolett.5b02769. Epub 2015 Oct 6. Nano Lett. 2015. PMID: 26421881

7

Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS₂ Field-Effect Transistors by Atomic Nitrogen Treatment.

Tang B, Yu ZG, Huang L, Chai J, Wong SL, Deng J, Yang W, Gong H, Wang S, Ang KW, Zhang YW, Chi D. Tang B, et al. Among authors: yu zg. ACS Nano. 2018 Mar 27;12(3):2506-2513. doi: 10.1021/acsnano.7b08261. Epub 2018 Mar 7. ACS Nano. 2018. PMID: 29505235

8

Highly Stable New Organic-Inorganic Hybrid 3D Perovskite CH₃NH₃PdI₃ and 2D Perovskite (CH₃NH₃)₃Pd₂I₇: DFT Analysis, Synthesis, Structure, Transition Behavior, and Physical Properties.

Liu X, Zhang N, Tang B, Li M, Zhang YW, Yu ZG, Gong H. Liu X, et al. Among authors: yu zg. J Phys Chem Lett. 2018 Oct 4;9(19):5862-5872. doi: 10.1021/acs.jpclett.8b02524. Epub 2018 Sep 26. J Phys Chem Lett. 2018. PMID: 30247925

9

In-Memory Computing using Memristor Arrays with Ultrathin 2D PdSeO_x /PdSe₂ Heterostructure.

Li Y, Chen S, Yu Z, Li S, Xiong Y, Pam ME, Zhang YW, Ang KW. Li Y, et al. Adv Mater. 2022 Jul;34(26):e2201488. doi: 10.1002/adma.202201488. Epub 2022 May 6. Adv Mater. 2022. PMID: 35393702

10

A first-principles-based high fidelity, high throughput approach for the design of high entropy alloys.

Sorkin V, Yu ZG, Chen S, Tan TL, Aitken ZH, Zhang YW. Sorkin V, et al. Among authors: yu zg. Sci Rep. 2022 Jul 13;12(1):11894. doi: 10.1038/s41598-022-16082-w. Sci Rep. 2022. PMID: 35831390 Free PMC article.

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