Ji W - Search Results

1

Diagnosing the Charge Dynamic Behaviors in Quantum-Dot Light-Emitting Diodes by Temperature-Dependent Measurements.

Bai J, Liu X, Chi X, Tang A, Zhang H, Ji W. Bai J, et al. Among authors: ji w. J Phys Chem Lett. 2024 Nov 28;15(47):11847-11854. doi: 10.1021/acs.jpclett.4c02868. Epub 2024 Nov 20. J Phys Chem Lett. 2024. PMID: 39565176

2

Electronic and Excitonic Processes in Quantum Dot Light-Emitting Diodes.

Yu P, Yuan Q, Zhao J, Zhang H, Ji W. Yu P, et al. Among authors: ji w. J Phys Chem Lett. 2022 Apr 7;13(13):2878-2884. doi: 10.1021/acs.jpclett.2c00604. Epub 2022 Mar 25. J Phys Chem Lett. 2022. PMID: 35333050

3

Memory-Enabled Quantum-Dot Light-Emitting Diodes.

Meng L, Bai J, Zhou T, Yu R, Wang L, Ji W. Meng L, et al. Among authors: ji w. J Phys Chem Lett. 2024 Feb 15;15(6):1726-1733. doi: 10.1021/acs.jpclett.3c03510. Epub 2024 Feb 7. J Phys Chem Lett. 2024. PMID: 38323848

4

High-Performance Tandem Quantum-Dot Light-Emitting Diodes Based on Bulk-Heterojunction-Like Charge-Generation Layers.

Zhou T, Wang T, Bai J, Liu S, Zhang H, Xie W, Ji W. Zhou T, et al. Among authors: ji w. Adv Mater. 2024 Jun;36(25):e2313888. doi: 10.1002/adma.202313888. Epub 2024 Mar 22. Adv Mater. 2024. PMID: 38488320

5

Ultrastable Quantum-Dot Light-Emitting Diodes by Suppression of Leakage Current and Exciton Quenching Processes.

Zhang H, Sui N, Chi X, Wang Y, Liu Q, Zhang H, Ji W. Zhang H, et al. Among authors: ji w. ACS Appl Mater Interfaces. 2016 Nov 16;8(45):31385-31391. doi: 10.1021/acsami.6b09246. Epub 2016 Nov 2. ACS Appl Mater Interfaces. 2016. PMID: 27781427

6

Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes.

Wang T, Zhu B, Wang S, Yuan Q, Zhang H, Kang Z, Wang R, Zhang H, Ji W. Wang T, et al. Among authors: ji w. ACS Appl Mater Interfaces. 2018 May 2;10(17):14894-14900. doi: 10.1021/acsami.8b01814. Epub 2018 Apr 19. ACS Appl Mater Interfaces. 2018. PMID: 29637767

7

Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer.

Ji W , Shen H , Zhang H , Kang Z , Zhang H . Ji W , et al. Nanoscale. 2018 Jun 14;10(23):11103-11109. doi: 10.1039/c8nr01460d. Nanoscale. 2018. PMID: 29872832

8

Exploring Electronic and Excitonic Processes toward Efficient Deep-Red CuInS₂/ZnS Quantum-Dot Light-Emitting Diodes.

Wang T, Guan X, Zhang H, Ji W. Wang T, et al. Among authors: ji w. ACS Appl Mater Interfaces. 2019 Oct 9;11(40):36925-36930. doi: 10.1021/acsami.9b13108. Epub 2019 Sep 24. ACS Appl Mater Interfaces. 2019. PMID: 31524372

9

Efficient Structure for InP/ZnS-Based Electroluminescence Device by Embedding the Emitters in the Electron-Dominating Interface.

Wang Y, Chen Z, Wang T, Zhang H, Zhang H, Wang R, Ji W. Wang Y, et al. Among authors: ji w. J Phys Chem Lett. 2020 Mar 5;11(5):1835-1839. doi: 10.1021/acs.jpclett.0c00112. Epub 2020 Feb 21. J Phys Chem Lett. 2020. PMID: 32077702

10

Near-Unity Red Mn²⁺ Photoluminescence Quantum Yield of Doped CsPbCl₃ Nanocrystals with Cd Incorporation.

Ji S, Yuan X, Cao S, Ji W, Zhang H, Wang Y, Li H, Zhao J, Zou B. Ji S, et al. Among authors: ji w. J Phys Chem Lett. 2020 Mar 19;11(6):2142-2149. doi: 10.1021/acs.jpclett.0c00372. Epub 2020 Mar 4. J Phys Chem Lett. 2020. PMID: 32108473

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