Taniguchi T - Search Results

1

Exciton-Exciton Interaction in Monolayer MoSe₂ from Mutual Screening of Coulomb Binding.

Xiao K, Yan T, Xiao C, Fan FR, Duan R, Liu Z, Watanabe K, Taniguchi T, Parkin SSP, Yao W, Cui X. Xiao K, et al. Among authors: taniguchi t. ACS Nano. 2024 Nov 19;18(46):31869-31876. doi: 10.1021/acsnano.4c08212. Epub 2024 Nov 8. ACS Nano. 2024. PMID: 39514698

2

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

Watanabe K, Taniguchi T, Kanda H. Watanabe K, et al. Among authors: taniguchi t. Nat Mater. 2004 Jun;3(6):404-9. doi: 10.1038/nmat1134. Epub 2004 May 23. Nat Mater. 2004. PMID: 15156198

3

Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure.

Kubota Y, Watanabe K, Tsuda O, Taniguchi T. Kubota Y, et al. Among authors: taniguchi t. Science. 2007 Aug 17;317(5840):932-4. doi: 10.1126/science.1144216. Science. 2007. PMID: 17702939

4

Effective cleaning of hexagonal boron nitride for graphene devices.

Garcia AG, Neumann M, Amet F, Williams JR, Watanabe K, Taniguchi T, Goldhaber-Gordon D. Garcia AG, et al. Among authors: taniguchi t. Nano Lett. 2012 Sep 12;12(9):4449-54. doi: 10.1021/nl3011726. Epub 2012 Aug 20. Nano Lett. 2012. PMID: 22866696

5

Negligible environmental sensitivity of graphene in a hexagonal boron nitride/graphene/h-BN sandwich structure.

Wang L, Chen Z, Dean CR, Taniguchi T, Watanabe K, Brus LE, Hone J. Wang L, et al. Among authors: taniguchi t. ACS Nano. 2012 Oct 23;6(10):9314-9. doi: 10.1021/nn304004s. Epub 2012 Oct 1. ACS Nano. 2012. PMID: 23009029

6

Optical probing of the electronic interaction between graphene and hexagonal boron nitride.

Ahn G, Kim HR, Ko TY, Choi K, Watanabe K, Taniguchi T, Hong BH, Ryu S. Ahn G, et al. Among authors: taniguchi t. ACS Nano. 2013 Feb 26;7(2):1533-41. doi: 10.1021/nn305306n. Epub 2013 Jan 17. ACS Nano. 2013. PMID: 23301838

7

Thermal conductivity and phonon transport in suspended few-layer hexagonal boron nitride.

Jo I, Pettes MT, Kim J, Watanabe K, Taniguchi T, Yao Z, Shi L. Jo I, et al. Among authors: taniguchi t. Nano Lett. 2013 Feb 13;13(2):550-4. doi: 10.1021/nl304060g. Epub 2013 Jan 28. Nano Lett. 2013. PMID: 23346863

8

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J. Lee GH, et al. Among authors: taniguchi t. ACS Nano. 2013 Sep 24;7(9):7931-6. doi: 10.1021/nn402954e. Epub 2013 Aug 14. ACS Nano. 2013. PMID: 23924287

9

Strong oxidation resistance of atomically thin boron nitride nanosheets.

Li LH, Cervenka J, Watanabe K, Taniguchi T, Chen Y. Li LH, et al. Among authors: taniguchi t. ACS Nano. 2014 Feb 25;8(2):1457-62. doi: 10.1021/nn500059s. Epub 2014 Jan 10. ACS Nano. 2014. PMID: 24400990

10

Physical adsorption and charge transfer of molecular Br2 on graphene.

Chen Z, Darancet P, Wang L, Crowther AC, Gao Y, Dean CR, Taniguchi T, Watanabe K, Hone J, Marianetti CA, Brus LE. Chen Z, et al. Among authors: taniguchi t. ACS Nano. 2014 Mar 25;8(3):2943-50. doi: 10.1021/nn500265f. Epub 2014 Feb 17. ACS Nano. 2014. PMID: 24528378

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