Wang H - Search Results

1

Low Contact Resistance on Monolayer MoS₂ Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts.

Sun Z, Kim SY, Cai J, Shen J, Lan HY, Tan Y, Wang X, Shen C, Wang H, Chen Z, Wallace RM, Appenzeller J. Sun Z, et al. Among authors: wang x, wang h. ACS Nano. 2024 Aug 20;18(33):22444-22453. doi: 10.1021/acsnano.4c07267. Epub 2024 Aug 7. ACS Nano. 2024. PMID: 39110477

2

Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications.

Qin J, Qiu G, Jian J, Zhou H, Yang L, Charnas A, Zemlyanov DY, Xu CY, Xu X, Wu W, Wang H, Ye PD. Qin J, et al. Among authors: wang h. ACS Nano. 2017 Oct 24;11(10):10222-10229. doi: 10.1021/acsnano.7b04786. Epub 2017 Sep 28. ACS Nano. 2017. PMID: 28949510

3

Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP₂S₆ for Solid-State Refrigeration.

Si M, Saha AK, Liao PY, Gao S, Neumayer SM, Jian J, Qin J, Balke Wisinger N, Wang H, Maksymovych P, Wu W, Gupta SK, Ye PD. Si M, et al. Among authors: wang h. ACS Nano. 2019 Aug 27;13(8):8760-8765. doi: 10.1021/acsnano.9b01491. Epub 2019 Aug 6. ACS Nano. 2019. PMID: 31374166

4

Why In₂O₃ Can Make 0.7 nm Atomic Layer Thin Transistors.

Si M, Hu Y, Lin Z, Sun X, Charnas A, Zheng D, Lyu X, Wang H, Cho K, Ye PD. Si M, et al. Among authors: wang h. Nano Lett. 2021 Jan 13;21(1):500-506. doi: 10.1021/acs.nanolett.0c03967. Epub 2020 Dec 29. Nano Lett. 2021. PMID: 33372788

5

Self-assembled HfO₂-Au nanocomposites with ultra-fine vertically aligned Au nanopillars.

Zhang Y, Zhang D, Liu J, Lu P, Deitz J, Shen J, He Z, Zhang X, Wang H. Zhang Y, et al. Among authors: wang h. Nanoscale. 2022 Aug 25;14(33):11979-11987. doi: 10.1039/d2nr03104c. Nanoscale. 2022. PMID: 35924419

6

Tunable physical properties in Bi-based layered supercell multiferroics embedded with Au nanoparticles.

Shen J, He Z, Zhang D, Lu P, Deitz J, Shang Z, Kalaswad M, Wang H, Xu X, Wang H. Shen J, et al. Among authors: wang h. Nanoscale Adv. 2022 Jun 7;4(14):3054-3064. doi: 10.1039/d2na00169a. eCollection 2022 Jul 15. Nanoscale Adv. 2022. PMID: 36133520 Free PMC article.

7

Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.

Lin Z, Si M, Askarpour V, Niu C, Charnas A, Shang Z, Zhang Y, Hu Y, Zhang Z, Liao PY, Cho K, Wang H, Lundstrom M, Maassen J, Ye PD. Lin Z, et al. Among authors: wang h. ACS Nano. 2022 Dec 27;16(12):21536-21545. doi: 10.1021/acsnano.2c10383. Epub 2022 Nov 29. ACS Nano. 2022. PMID: 36446079

8

Controllable Phase Transition Properties in VO₂ Films via Metal-Ion Intercalation.

He Z, Qi Z, Yang B, Lu P, Shen J, Dilley NR, Zhang X, Wang H. He Z, et al. Among authors: wang h. Nano Lett. 2023 Feb 22;23(4):1119-1127. doi: 10.1021/acs.nanolett.2c03286. Epub 2023 Jan 31. Nano Lett. 2023. PMID: 36719402

9

Controlled Growth of Vertically Aligned Nanocomposites through a Au Seeding-Assisted Method.

Shen J, Hu Z, Quigley L, Wang H. Shen J, et al. Among authors: wang h. ACS Omega. 2023 Sep 25;8(40):37140-37146. doi: 10.1021/acsomega.3c04701. eCollection 2023 Oct 10. ACS Omega. 2023. PMID: 37841141 Free PMC article.

10

Improved epitaxial growth and multiferroic properties of Bi₃Fe₂Mn₂O_x using CeO₂ re-seeding layers.

Barnard JP, Shen J, Zhang Y, Lu J, Song J, Siddiqui A, Sarma R, Wang H. Barnard JP, et al. Among authors: wang h. Nanoscale Adv. 2023 Oct 2;5(21):5850-5858. doi: 10.1039/d3na00512g. eCollection 2023 Oct 24. Nanoscale Adv. 2023. PMID: 37881699 Free PMC article.

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