Annular fast electron transport in silicon arising from low-temperature resistivity.
MacLellan DA, Carroll DC, Gray RJ, Booth N, Burza M, Desjarlais MP, Du F, Gonzalez-Izquierdo B, Neely D, Powell HW, Robinson AP, Rusby DR, Scott GG, Yuan XH, Wahlström CG, McKenna P.
MacLellan DA, et al. Among authors: du f.
Phys Rev Lett. 2013 Aug 30;111(9):095001. doi: 10.1103/PhysRevLett.111.095001. Epub 2013 Aug 28.
Phys Rev Lett. 2013.
PMID: 24033041
Free article.