Sheu JK - Search Results

1

Advancements in electrochemical biosensing of cardiovascular disease biomarkers.

Kogularasu S, Lin WC, Lee YY, Huang BW, Chen YL, Chang-Chien GP, Sheu JK. Kogularasu S, et al. Among authors: sheu jk. J Mater Chem B. 2024 Jul 3;12(26):6305-6327. doi: 10.1039/d4tb00333k. J Mater Chem B. 2024. PMID: 38912548 Review.

2

Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe₂/2H-MoTe₂ heterojunctions grown by chemical vapor deposition.

Chi PF, Wang JJ, Zhang JW, Chuang YL, Lee ML, Sheu JK. Chi PF, et al. Among authors: sheu jk. Nanoscale Horiz. 2024 Oct 21;9(11):2060-2066. doi: 10.1039/d4nh00347k. Nanoscale Horiz. 2024. PMID: 39283319

3

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK. Yang YC, et al. Among authors: sheu jk. Opt Express. 2012 Nov 5;20 Suppl 6:A1019-25. doi: 10.1364/OE.20.0A1019. Opt Express. 2012. PMID: 23187653 Free article.

4

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK. Yang YC, et al. Among authors: sheu jk. Opt Express. 2012 Nov 5;20(23):A1019-25. Opt Express. 2012. PMID: 23326851 Free article.

5

GaN intermediate band solar cells with Mn-doped absorption layer.

Lee ML, Huang FW, Chen PC, Sheu JK. Lee ML, et al. Among authors: sheu jk. Sci Rep. 2018 Jun 5;8(1):8641. doi: 10.1038/s41598-018-27005-z. Sci Rep. 2018. PMID: 29872117 Free PMC article.

6

Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth.

Lee ML, Wang SS, Yeh YH, Liao PH, Sheu JK. Lee ML, et al. Among authors: sheu jk. Sci Rep. 2019 Mar 1;9(1):3243. doi: 10.1038/s41598-019-40095-7. Sci Rep. 2019. PMID: 30824803 Free PMC article.

7

Mn-doped GaN as photoelectrodes for the photoelectrolysis of water under visible light.

Liu SY, Sheu JK, Lin YC, Tu SJ, Huang FW, Lee ML, Lai WC. Liu SY, et al. Among authors: sheu jk. Opt Express. 2012 Sep 10;20 Suppl 5:A678-83. doi: 10.1364/OE.20.00A678. Opt Express. 2012. PMID: 23037534 Free article.

8

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.

Sheu JK, Chang KH, Tu SJ, Lee ML, Yang CC, Hsu CK, Lai WC. Sheu JK, et al. Opt Express. 2010 Nov 8;18 Suppl 4:A562-7. doi: 10.1364/OE.18.00A562. Opt Express. 2010. PMID: 21165089 Free article.

9

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK. Yang YC, et al. Among authors: sheu jk. Opt Express. 2012 Jan 2;20(1):A119-24. doi: 10.1364/oe.20.00a119. Opt Express. 2012. PMID: 22379672 Free article.

10

The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes.

Wang TY, Lai WC, Xie QJ, Yang SH, Chang SP, Kuo CH, Sheu JK. Wang TY, et al. Among authors: sheu jk. RSC Adv. 2023 Feb 13;13(8):5437-5443. doi: 10.1039/d2ra07368d. eCollection 2023 Feb 6. RSC Adv. 2023. PMID: 36793296 Free PMC article.

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