Pan F - Search Results

1

Antiferromagnetic magnonic charge current generation via ultrafast optical excitation.

Huang L, Liao L, Qiu H, Chen X, Bai H, Han L, Zhou Y, Su Y, Zhou Z, Pan F, Jin B, Song C. Huang L, et al. Among authors: pan f. Nat Commun. 2024 May 20;15(1):4270. doi: 10.1038/s41467-024-48391-1. Nat Commun. 2024. PMID: 38769299 Free PMC article.

2

Resistive switching and magnetic modulation in cobalt-doped ZnO.

Chen G, Song C, Chen C, Gao S, Zeng F, Pan F. Chen G, et al. Among authors: pan f. Adv Mater. 2012 Jul 10;24(26):3515-20. doi: 10.1002/adma.201201595. Epub 2012 Jun 8. Adv Mater. 2012. PMID: 22678882

3

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer.

Tang G, Zeng F, Chen C, Liu H, Gao S, Song C, Lin Y, Chen G, Pan F. Tang G, et al. Among authors: pan f. Nanoscale. 2013 Jan 7;5(1):422-8. doi: 10.1039/c2nr32743k. Epub 2012 Nov 27. Nanoscale. 2013. PMID: 23187889

4

Effect of electrode materials on AlN-based bipolar and complementary resistive switching.

Chen C, Gao S, Tang G, Fu H, Wang G, Song C, Zeng F, Pan F. Chen C, et al. Among authors: pan f. ACS Appl Mater Interfaces. 2013 Mar 13;5(5):1793-9. doi: 10.1021/am303128h. Epub 2013 Feb 20. ACS Appl Mater Interfaces. 2013. PMID: 23422310

5

Contributions of magnetic properties in epitaxial copper-doped ZnO.

Liu H, Zeng F, Gao S, Wang G, Song C, Pan F. Liu H, et al. Among authors: pan f. Phys Chem Chem Phys. 2013 Aug 21;15(31):13153-61. doi: 10.1039/c3cp51894a. Phys Chem Chem Phys. 2013. PMID: 23824337

6

Conductance quantization in a Ag filament-based polymer resistive memory.

Gao S, Zeng F, Chen C, Tang G, Lin Y, Zheng Z, Song C, Pan F. Gao S, et al. Among authors: pan f. Nanotechnology. 2013 Aug 23;24(33):335201. doi: 10.1088/0957-4484/24/33/335201. Epub 2013 Jul 26. Nanotechnology. 2013. PMID: 23893907

7

Realization of the meminductor.

Han J, Song C, Gao S, Wang Y, Chen C, Pan F. Han J, et al. Among authors: pan f. ACS Nano. 2014 Oct 28;8(10):10043-7. doi: 10.1021/nn502655u. Epub 2014 Oct 1. ACS Nano. 2014. PMID: 25271940

8

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.

Gao S, Zeng F, Li F, Wang M, Mao H, Wang G, Song C, Pan F. Gao S, et al. Among authors: pan f. Nanoscale. 2015 Apr 14;7(14):6031-8. doi: 10.1039/c4nr06406b. Nanoscale. 2015. PMID: 25765948

9

Electrical control of the exchange spring in antiferromagnetic metals.

Wang Y, Zhou X, Song C, Yan Y, Zhou S, Wang G, Chen C, Zeng F, Pan F. Wang Y, et al. Among authors: pan f. Adv Mater. 2015 May 27;27(20):3196-201. doi: 10.1002/adma.201405811. Epub 2015 Apr 11. Adv Mater. 2015. PMID: 25865870

10

Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.

Gao S, Zeng F, Wang M, Wang G, Song C, Pan F. Gao S, et al. Among authors: pan f. Phys Chem Chem Phys. 2015 May 21;17(19):12849-56. doi: 10.1039/c5cp01235j. Phys Chem Chem Phys. 2015. PMID: 25907552

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