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Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability.
ACS Appl Electron Mater. 2023 Sep 5;5(9):5025-5031. doi: 10.1021/acsaelm.3c00782. eCollection 2023 Sep 26.
ACS Appl Electron Mater. 2023.
PMID: 37779889
Free PMC article.
Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1.
Rosário CMM, Thöner B, Schönhals A, Menzel S, Meledin A, Barradas NP, Alves E, Mayer J, Wuttig M, Waser R, Sobolev NA, Wouters DJ.
Rosário CMM, et al.
Nanoscale. 2019 Sep 28;11(36):16978-16990. doi: 10.1039/c9nr05285b. Epub 2019 Sep 9.
Nanoscale. 2019.
PMID: 31498350
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