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Strong third-order nonlinearity in amorphous silicon carbide waveguides.
Opt Lett. 2024 Aug 1;49(15):4389-4392. doi: 10.1364/OL.525579.
Opt Lett. 2024.
PMID: 39090941
Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices.
Shi X, Lu Y, Chaussende D, Rottwitt K, Ou H.
Shi X, et al. Among authors: chaussende d.
Materials (Basel). 2023 Mar 14;16(6):2324. doi: 10.3390/ma16062324.
Materials (Basel). 2023.
PMID: 36984202
Free PMC article.
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Novel Photonic Applications of Silicon Carbide.
Ou H, Shi X, Lu Y, Kollmuss M, Steiner J, Tabouret V, Syväjärvi M, Wellmann P, Chaussende D.
Ou H, et al. Among authors: chaussende d.
Materials (Basel). 2023 Jan 22;16(3):1014. doi: 10.3390/ma16031014.
Materials (Basel). 2023.
PMID: 36770020
Free PMC article.
Review.
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A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy.
Ferro G, Chaussende D.
Ferro G, et al. Among authors: chaussende d.
Sci Rep. 2017 Feb 17;7:43069. doi: 10.1038/srep43069.
Sci Rep. 2017.
PMID: 28211528
Free PMC article.
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