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Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices.
Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Lei Y, et al. Among authors: pourtois g. ACS Nanosci Au. 2022 Dec 21;2(6):450-485. doi: 10.1021/acsnanoscienceau.2c00017. Epub 2022 Sep 16. ACS Nanosci Au. 2022. PMID: 36573124 Free PMC article. Review.
Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymers.
Beljonne D, Pourtois G, Silva C, Hennebicq E, Herz LM, Friend RH, Scholes GD, Setayesh S, Mullen K, Bredas JL. Beljonne D, et al. Among authors: pourtois g. Proc Natl Acad Sci U S A. 2002 Aug 20;99(17):10982-7. doi: 10.1073/pnas.172390999. Epub 2002 Aug 12. Proc Natl Acad Sci U S A. 2002. PMID: 12177444 Free PMC article.
Alternating oligo(p-phenylene vinylene)--perylene bisimide copolymers: synthesis, photophysics, and photovoltaic properties of a new class of donor--acceptor materials.
Neuteboom EE, Meskers SC, van Hal PA, van Duren JK, Meijer EW, Janssen RA, Dupin H, Pourtois G, Cornil J, Lazzaroni R, Brédas JL, Beljonne D. Neuteboom EE, et al. Among authors: pourtois g. J Am Chem Soc. 2003 Jul 16;125(28):8625-38. doi: 10.1021/ja034926t. J Am Chem Soc. 2003. PMID: 12848570
Dilute Rhenium Doping and its Impact on Defects in MoS2.
Torsi R, Munson KT, Pendurthi R, Marques E, Van Troeye B, Huberich L, Schuler B, Feidler M, Wang K, Pourtois G, Das S, Asbury JB, Lin YC, Robinson JA. Torsi R, et al. Among authors: pourtois g. ACS Nano. 2023 Aug 22;17(16):15629-15640. doi: 10.1021/acsnano.3c02626. Epub 2023 Aug 3. ACS Nano. 2023. PMID: 37534591
Capturing wetting states in nanopatterned silicon.
Xu X, Vereecke G, Chen C, Pourtois G, Armini S, Verellen N, Tsai WK, Kim DW, Lee E, Lin CY, Van Dorpe P, Struyf H, Holsteyns F, Moshchalkov V, Indekeu J, De Gendt S. Xu X, et al. Among authors: pourtois g. ACS Nano. 2014 Jan 28;8(1):885-93. doi: 10.1021/nn405621w. Epub 2014 Jan 13. ACS Nano. 2014. PMID: 24380402
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.
Chiappe D, Ludwig J, Leonhardt A, El Kazzi S, Nalin Mehta A, Nuytten T, Celano U, Sutar S, Pourtois G, Caymax M, Paredis K, Vandervorst W, Lin D, De Gendt S, Barla K, Huyghebaert C, Asselberghs I, Radu I. Chiappe D, et al. Among authors: pourtois g. Nanotechnology. 2018 Oct 19;29(42):425602. doi: 10.1088/1361-6528/aad798. Epub 2018 Aug 2. Nanotechnology. 2018. PMID: 30070657
179 results