Lukosius M - Search Results

1

Reliable metal-graphene contact formation process flows in a CMOS-compatible environment.

Elviretti M, Lisker M, Lukose R, Lukosius M, Akhtar F, Mai A. Elviretti M, et al. Among authors: lukosius m. Nanoscale Adv. 2022 Sep 8;4(20):4373-4380. doi: 10.1039/d2na00351a. eCollection 2022 Oct 11. Nanoscale Adv. 2022. PMID: 36321140 Free PMC article.

2

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates.

Lukosius M, Dabrowski J, Kitzmann J, Fursenko O, Akhtar F, Lisker M, Lippert G, Schulze S, Yamamoto Y, Schubert MA, Krause HM, Wolff A, Mai A, Schroeder T, Lupina G. Lukosius M, et al. ACS Appl Mater Interfaces. 2016 Dec 14;8(49):33786-33793. doi: 10.1021/acsami.6b11397. Epub 2016 Nov 30. ACS Appl Mater Interfaces. 2016. PMID: 27960421

3

Investigation of the Oxidation Behavior of Graphene/Ge(001) Versus Graphene/Ge(110) Systems.

Akhtar F, Dabrowski J, Lisker M, Yamamoto Y, Mai A, Wenger C, Lukosius M. Akhtar F, et al. Among authors: lukosius m. ACS Appl Mater Interfaces. 2020 Jan 15;12(2):3188-3197. doi: 10.1021/acsami.9b18448. Epub 2020 Jan 2. ACS Appl Mater Interfaces. 2020. PMID: 31895529

4

Influence of plasma treatment on SiO₂/Si and Si₃N₄/Si substrates for large-scale transfer of graphene.

Lukose R, Lisker M, Akhtar F, Fraschke M, Grabolla T, Mai A, Lukosius M. Lukose R, et al. Among authors: lukosius m. Sci Rep. 2021 Jun 23;11(1):13111. doi: 10.1038/s41598-021-92432-4. Sci Rep. 2021. PMID: 34162923 Free PMC article.

5

Author Correction: Influence of plasma treatment on SiO₂/Si and Si₃N₄/Si substrates for large-scale transfer of graphene.

Lukose R, Lisker M, Akhtar F, Fraschke M, Grabolla T, Mai A, Lukosius M. Lukose R, et al. Among authors: lukosius m. Sci Rep. 2021 Aug 20;11(1):17222. doi: 10.1038/s41598-021-96605-z. Sci Rep. 2021. PMID: 34417531 Free PMC article. No abstract available.

6

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001).

Akhtar F, Dabrowski J, Lukose R, Wenger C, Lukosius M. Akhtar F, et al. Among authors: lukosius m. ACS Appl Mater Interfaces. 2023 Aug 2;15(30):36966-36974. doi: 10.1021/acsami.3c05860. Epub 2023 Jul 21. ACS Appl Mater Interfaces. 2023. PMID: 37479219 Free PMC article.

7

Residual metallic contamination of transferred chemical vapor deposited graphene.

Lupina G, Kitzmann J, Costina I, Lukosius M, Wenger C, Wolff A, Vaziri S, Östling M, Pasternak I, Krajewska A, Strupinski W, Kataria S, Gahoi A, Lemme MC, Ruhl G, Zoth G, Luxenhofer O, Mehr W. Lupina G, et al. Among authors: lukosius m. ACS Nano. 2015 May 26;9(5):4776-85. doi: 10.1021/acsnano.5b01261. Epub 2015 Apr 28. ACS Nano. 2015. PMID: 25853630

8

Graphene growth on Ge(100)/Si(100) substrates by CVD method.

Pasternak I, Wesolowski M, Jozwik I, Lukosius M, Lupina G, Dabrowski P, Baranowski JM, Strupinski W. Pasternak I, et al. Among authors: lukosius m. Sci Rep. 2016 Feb 22;6:21773. doi: 10.1038/srep21773. Sci Rep. 2016. PMID: 26899732 Free PMC article.

9

Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene.

Kitzmann J, Göritz A, Fraschke M, Lukosius M, Wenger C, Wolff A, Lupina G. Kitzmann J, et al. Among authors: lukosius m. Sci Rep. 2016 Jul 6;6:29223. doi: 10.1038/srep29223. Sci Rep. 2016. PMID: 27381715 Free PMC article.

10

High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates.

Aprojanz J, Rosenzweig P, Nguyen TTN, Karakachian H, Küster K, Starke U, Lukosius M, Lippert G, Sinterhauf A, Wenderoth M, Zakharov AA, Tegenkamp C. Aprojanz J, et al. Among authors: lukosius m. ACS Appl Mater Interfaces. 2020 Sep 23;12(38):43065-43072. doi: 10.1021/acsami.0c10725. Epub 2020 Sep 14. ACS Appl Mater Interfaces. 2020. PMID: 32865383

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