Chen Q - Search Results

1

Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y₂O₃.

Jiang Y, Shen R, Li T, Tian J, Li S, Tan HH, Jagadish C, Chen Q. Jiang Y, et al. Among authors: chen q. Nanoscale. 2022 Sep 15;14(35):12830-12840. doi: 10.1039/d2nr02736d. Nanoscale. 2022. PMID: 36039889

2

Self-healing of bended WS2 nanotubes and its effect on the nanotube's properties.

Xu T, Chen Q, Zhang C, Ran K, Wang J, Rosentsveig R, Tenne R. Xu T, et al. Among authors: chen q. Nanoscale. 2012 Dec 21;4(24):7825-31. doi: 10.1039/c2nr32591h. Epub 2012 Nov 14. Nanoscale. 2012. PMID: 23149481

3

Directly correlating the strain-induced electronic property change to the chirality of individual single-walled and few-walled carbon nanotubes.

Ning Z, Chen Q, Wei J, Zhang R, Ye L, Wei X, Fu M, Guo Y, Bai X, Wei F. Ning Z, et al. Among authors: chen q. Nanoscale. 2015 Aug 14;7(30):13116-24. doi: 10.1039/c5nr02947c. Nanoscale. 2015. PMID: 26176661

4

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Shu J, Wu G, Guo Y, Liu B, Wei X, Chen Q. Shu J, et al. Among authors: chen q. Nanoscale. 2016 Feb 7;8(5):3049-56. doi: 10.1039/c5nr07336g. Nanoscale. 2016. PMID: 26782750

5

Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator.

Ning Z, Fu M, Wu G, Qiu C, Shu J, Guo Y, Wei X, Gao S, Chen Q. Ning Z, et al. Among authors: chen q. Nanoscale. 2016 Apr 28;8(16):8658-65. doi: 10.1039/c6nr00713a. Epub 2016 Apr 6. Nanoscale. 2016. PMID: 27050841

6

Single-walled carbon nanotube thermionic electron emitters with dense, efficient and reproducible electron emission.

Wang Y, Wu G, Xiang L, Xiao M, Li Z, Gao S, Chen Q, Wei X. Wang Y, et al. Among authors: chen q. Nanoscale. 2017 Nov 23;9(45):17814-17820. doi: 10.1039/c7nr05388f. Nanoscale. 2017. PMID: 29115331

7

Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate.

Yang W, Pan D, Shen R, Wang X, Zhao J, Chen Q. Yang W, et al. Among authors: chen q. Nanotechnology. 2018 Oct 12;29(41):415203. doi: 10.1088/1361-6528/aad67c. Epub 2018 Jul 27. Nanotechnology. 2018. PMID: 30052527

8

Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y₂O₃/HfO₂ layers.

Li T , Shen R , Sun M , Pan D , Zhang J , Xu J , Zhao J , Chen Q . Li T , et al. Among authors: chen q. Nanoscale. 2018 Oct 21;10(39):18492-18501. doi: 10.1039/c8nr05680c. Epub 2018 Aug 22. Nanoscale. 2018. PMID: 30132773

9

Constant-rate dissolution of InAs nanowires in radiolytic water observed by in situ liquid cell TEM.

Sun M , Li X , Tang Z , Wei X , Chen Q . Sun M , et al. Among authors: chen q. Nanoscale. 2018 Nov 1;10(42):19733-19741. doi: 10.1039/c8nr04096f. Nanoscale. 2018. PMID: 30198038

10

UV-SWIR broad range photodetectors made from few-layer α-In₂Se₃ nanosheets.

Tang B, Hou L, Sun M, Lv F, Liao J, Ji W, Chen Q. Tang B, et al. Among authors: chen q. Nanoscale. 2019 Jul 11;11(27):12817-12828. doi: 10.1039/c9nr03077h. Nanoscale. 2019. PMID: 31180398

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