Zhang S - Search Results

1

Atom Substitution Defects of Hexagonal Boron Phosphide Suppress Charge Recombination.

Xu L, Wang A, Li B, Zhao J, Zeng H, Zhang S. Xu L, et al. Among authors: zhang s. J Phys Chem Lett. 2022 Jul 21;13(28):6455-6461. doi: 10.1021/acs.jpclett.2c01882. Epub 2022 Jul 11. J Phys Chem Lett. 2022. PMID: 35816281

2

Modulating the phase transition between metallic and semiconducting single-layer MoS2 and WS2 through size effects.

Hu Z, Zhang S, Zhang YN, Wang D, Zeng H, Liu LM. Hu Z, et al. Among authors: zhang yn, zhang s. Phys Chem Chem Phys. 2015 Jan 14;17(2):1099-105. doi: 10.1039/c4cp04775c. Epub 2014 Nov 21. Phys Chem Chem Phys. 2015. PMID: 25415547

3

Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions.

Zhang S, Yan Z, Li Y, Chen Z, Zeng H. Zhang S, et al. Angew Chem Int Ed Engl. 2015 Mar 2;54(10):3112-5. doi: 10.1002/anie.201411246. Epub 2015 Jan 7. Angew Chem Int Ed Engl. 2015. PMID: 25564773

4

Tinene: a two-dimensional Dirac material with a 72 meV band gap.

Cai B, Zhang S, Hu Z, Hu Y, Zou Y, Zeng H. Cai B, et al. Among authors: zhang s. Phys Chem Chem Phys. 2015 May 21;17(19):12634-8. doi: 10.1039/c5cp00563a. Phys Chem Chem Phys. 2015. PMID: 25904409

5

Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities.

Zhang S, Xie M, Li F, Yan Z, Li Y, Kan E, Liu W, Chen Z, Zeng H. Zhang S, et al. Angew Chem Int Ed Engl. 2016 Jan 26;55(5):1666-9. doi: 10.1002/anie.201507568. Epub 2015 Dec 16. Angew Chem Int Ed Engl. 2016. PMID: 26671733

6

Nonlinear Saturable Absorption of Liquid-Exfoliated Molybdenum/Tungsten Ditelluride Nanosheets.

Mao D, Du B, Yang D, Zhang S, Wang Y, Zhang W, She X, Cheng H, Zeng H, Zhao J. Mao D, et al. Among authors: zhang s, zhang w. Small. 2016 Mar;12(11):1489-97. doi: 10.1002/smll.201503348. Epub 2016 Jan 22. Small. 2016. PMID: 26800122

7

Two-dimensional GeS with tunable electronic properties via external electric field and strain.

Zhang S, Wang N, Liu S, Huang S, Zhou W, Cai B, Xie M, Yang Q, Chen X, Zeng H. Zhang S, et al. Nanotechnology. 2016 Jul 8;27(27):274001. doi: 10.1088/0957-4484/27/27/274001. Epub 2016 May 27. Nanotechnology. 2016. PMID: 27232104

8

Two-dimensional BX (X = P, As, Sb) semiconductors with mobilities approaching graphene.

Xie M, Zhang S, Cai B, Zhu Z, Zou Y, Zeng H. Xie M, et al. Among authors: zhang s. Nanoscale. 2016 Jul 21;8(27):13407-13. doi: 10.1039/c6nr02923j. Epub 2016 Jun 27. Nanoscale. 2016. PMID: 27346538

9

Two-dimensional antimonene single crystals grown by van der Waals epitaxy.

Ji J, Song X, Liu J, Yan Z, Huo C, Zhang S, Su M, Liao L, Wang W, Ni Z, Hao Y, Zeng H. Ji J, et al. Among authors: zhang s. Nat Commun. 2016 Nov 15;7:13352. doi: 10.1038/ncomms13352. Nat Commun. 2016. PMID: 27845327 Free PMC article.

10

Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator.

Zhang S, Zhou W, Ma Y, Ji J, Cai B, Yang SA, Zhu Z, Chen Z, Zeng H. Zhang S, et al. Nano Lett. 2017 Jun 14;17(6):3434-3440. doi: 10.1021/acs.nanolett.7b00297. Epub 2017 May 3. Nano Lett. 2017. PMID: 28460176

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