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Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation.
Dalton Trans. 2022 Jun 21;51(24):9291-9301. doi: 10.1039/d1dt04008a.
Dalton Trans. 2022.
PMID: 35670312
Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.
You T, Ou X, Niu G, Bärwolf F, Li G, Du N, Bürger D, Skorupa I, Jia Q, Yu W, Wang X, Schmidt OG, Schmidt H.
You T, et al. Among authors: barwolf f.
Sci Rep. 2015 Dec 22;5:18623. doi: 10.1038/srep18623.
Sci Rep. 2015.
PMID: 26692104
Free PMC article.
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