Chen Q - Search Results

1

A non-destructive and efficient transfer method for preparing 2D materials samples for transmission electron microscopy study.

Lyu F, Tang B, Li X, Chen Q. Lyu F, et al. Among authors: chen q. Nanotechnology. 2022 May 31;33(34). doi: 10.1088/1361-6528/ac6f0f. Nanotechnology. 2022. PMID: 35550370

2

In situ comprehensive characterization of optoelectronic nanomaterials for device purposes.

Li C, Gao M, Ding C, Zhang X, Zhang L, Chen Q, Peng LM. Li C, et al. Among authors: chen q. Nanotechnology. 2009 Apr 29;20(17):175703. doi: 10.1088/0957-4484/20/17/175703. Epub 2009 Apr 3. Nanotechnology. 2009. PMID: 19420598

3

Room temperature synthesis of K2Mo3O10x3H2O nanowires in minutes.

Gong W, Xue J, Zhang K, Wu Z, Wei D, Chen Q, Pan H, Xu S. Gong W, et al. Among authors: chen q. Nanotechnology. 2009 May 27;20(21):215603. doi: 10.1088/0957-4484/20/21/215603. Epub 2009 May 6. Nanotechnology. 2009. PMID: 19423934

4

Establishing Ohmic contacts for in situ current-voltage characteristic measurements on a carbon nanotube inside the scanning electron microscope.

Chen Q, Wang S, Peng LM. Chen Q, et al. Nanotechnology. 2006 Feb 28;17(4):1087-98. doi: 10.1088/0957-4484/17/4/041. Epub 2006 Jan 30. Nanotechnology. 2006. PMID: 21727386

5

Controlling electron-beam-induced carbon deposition on carbon nanotubes by Joule heating.

Wei XL, Liu Y, Chen Q, Peng LM. Wei XL, et al. Among authors: chen q. Nanotechnology. 2008 Sep 3;19(35):355304. doi: 10.1088/0957-4484/19/35/355304. Epub 2008 Jul 17. Nanotechnology. 2008. PMID: 21828844

6

Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm.

Shi T, Fu M, Pan D, Guo Y, Zhao J, Chen Q. Shi T, et al. Among authors: chen q. Nanotechnology. 2015 May 1;26(17):175202. doi: 10.1088/0957-4484/26/17/175202. Epub 2015 Apr 9. Nanotechnology. 2015. PMID: 25854416

7

Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays.

Shi T, Wang X, Wang B, Wang W, Yang X, Yang W, Chen Q, Xu H, Xu S, Yang T. Shi T, et al. Among authors: chen q. Nanotechnology. 2015 Jul 3;26(26):265302. doi: 10.1088/0957-4484/26/26/265302. Epub 2015 Jun 11. Nanotechnology. 2015. PMID: 26062784

8

Whole-journey nanomaterial research in an electron microscope: from material synthesis, composition characterization, property measurements to device construction and tests.

Tang Z, Li X, Wu G, Gao S, Chen Q, Peng L, Wei X. Tang Z, et al. Among authors: chen q. Nanotechnology. 2016 Dec 2;27(48):485710. doi: 10.1088/0957-4484/27/48/485710. Epub 2016 Nov 7. Nanotechnology. 2016. PMID: 27819798

9

Influence of water vapor on the electronic property of MoS₂ field effect transistors.

Shu J, Wu G, Gao S, Liu B, Wei X, Chen Q. Shu J, et al. Among authors: chen q. Nanotechnology. 2017 May 19;28(20):204003. doi: 10.1088/1361-6528/aa642d. Epub 2017 Mar 2. Nanotechnology. 2017. PMID: 28252447

10

Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate.

Yang W, Pan D, Shen R, Wang X, Zhao J, Chen Q. Yang W, et al. Among authors: chen q. Nanotechnology. 2018 Oct 12;29(41):415203. doi: 10.1088/1361-6528/aad67c. Epub 2018 Jul 27. Nanotechnology. 2018. PMID: 30052527

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