Chen Q - Search Results

1

Temperature-Driven α-β Phase Transformation and Enhanced Electronic Property of 2H α-In₂Se₃.

Lyu F, Li X, Tian J, Li Z, Liu B, Chen Q. Lyu F, et al. Among authors: chen q. ACS Appl Mater Interfaces. 2022 May 12. doi: 10.1021/acsami.2c03270. Online ahead of print. ACS Appl Mater Interfaces. 2022. PMID: 35548977

2

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Shu J, Wu G, Guo Y, Liu B, Wei X, Chen Q. Shu J, et al. Among authors: chen q. Nanoscale. 2016 Feb 7;8(5):3049-56. doi: 10.1039/c5nr07336g. Nanoscale. 2016. PMID: 26782750

3

Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire.

Han Y, Fu M, Tang Z, Zheng X, Ji X, Wang X, Lin W, Yang T, Chen Q. Han Y, et al. Among authors: chen q. ACS Appl Mater Interfaces. 2017 Jan 25;9(3):2867-2874. doi: 10.1021/acsami.6b13775. Epub 2017 Jan 12. ACS Appl Mater Interfaces. 2017. PMID: 28049290

4

Influence of water vapor on the electronic property of MoS₂ field effect transistors.

Shu J, Wu G, Gao S, Liu B, Wei X, Chen Q. Shu J, et al. Among authors: chen q. Nanotechnology. 2017 May 19;28(20):204003. doi: 10.1088/1361-6528/aa642d. Epub 2017 Mar 2. Nanotechnology. 2017. PMID: 28252447

5

Single-walled carbon nanotube thermionic electron emitters with dense, efficient and reproducible electron emission.

Wang Y, Wu G, Xiang L, Xiao M, Li Z, Gao S, Chen Q, Wei X. Wang Y, et al. Among authors: chen q. Nanoscale. 2017 Nov 23;9(45):17814-17820. doi: 10.1039/c7nr05388f. Nanoscale. 2017. PMID: 29115331

6

Vis-IR Wide-Spectrum Photodetector at Room Temperature Based on p-n Junction-Type GaAs_1-xSb_x/InAs Core-Shell Nanowire.

Wang X, Pan D, Han Y, Sun M, Zhao J, Chen Q. Wang X, et al. Among authors: chen q. ACS Appl Mater Interfaces. 2019 Oct 23;11(42):38973-38981. doi: 10.1021/acsami.9b13559. Epub 2019 Oct 14. ACS Appl Mater Interfaces. 2019. PMID: 31576737

7

Photodetector based on heterostructure of two-dimensional WSe₂/In₂Se₃.

Liu B, Tang B, Lv F, Zeng Y, Liao J, Wang S, Chen Q. Liu B, et al. Among authors: chen q. Nanotechnology. 2020 Jan 31;31(6):065203. doi: 10.1088/1361-6528/ab519b. Epub 2019 Oct 28. Nanotechnology. 2020. PMID: 31658448

8

Controlling the Facet of ZnO during Wet Chemical Etching Its (000

\bar{1}

) O-Terminated Surface.

Sun M, Yu B, Hong M, Li Z, Lyu F, Li X, Li Z, Wei X, Zhang Z, Zhang Y, Chen Q. Sun M, et al. Among authors: chen q. Small. 2020 Apr;16(14):e1906435. doi: 10.1002/smll.201906435. Epub 2020 Feb 28. Small. 2020. PMID: 32108429

9

Thickness-dependent band gap of α-In₂Se₃: from electron energy loss spectroscopy to density functional theory calculations.

Lyu F, Sun Y, Yang Q, Tang B, Li M, Li Z, Sun M, Gao P, Ye LH, Chen Q. Lyu F, et al. Among authors: chen q. Nanotechnology. 2020 Jul 31;31(31):315711. doi: 10.1088/1361-6528/ab8998. Epub 2020 Apr 15. Nanotechnology. 2020. PMID: 32294630

10

Novel Type of Synaptic Transistors Based on a Ferroelectric Semiconductor Channel.

Tang B, Hussain S, Xu R, Cheng Z, Liao J, Chen Q. Tang B, et al. Among authors: chen q. ACS Appl Mater Interfaces. 2020 Jun 3;12(22):24920-24928. doi: 10.1021/acsami.9b23595. Epub 2020 May 21. ACS Appl Mater Interfaces. 2020. PMID: 32391683

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