Hao Y - Search Results

1

Electrically Tunable Second Harmonic Generation in Atomically Thin ReS₂.

Wang J, Han N, Luo ZD, Zhang M, Chen X, Liu Y, Hao Y, Zhao J, Gan X. Wang J, et al. Among authors: hao y. ACS Nano. 2022 Apr 26;16(4):6404-6413. doi: 10.1021/acsnano.2c00514. Epub 2022 Apr 15. ACS Nano. 2022. PMID: 35426299

2

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.

Liu Y, Niu J, Wang H, Han G, Zhang C, Feng Q, Zhang J, Hao Y. Liu Y, et al. Among authors: hao y. Nanoscale Res Lett. 2017 Dec;12(1):120. doi: 10.1186/s11671-017-1913-3. Epub 2017 Feb 16. Nanoscale Res Lett. 2017. PMID: 28228005 Free PMC article.

3

Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment.

Zhang Y, Han G, Wu H, Wang X, Liu Y, Zhang J, Liu H, Zheng H, Chen X, Liu C, Hao Y. Zhang Y, et al. Among authors: hao y. Nanoscale Res Lett. 2018 Aug 15;13(1):237. doi: 10.1186/s11671-018-2650-y. Nanoscale Res Lett. 2018. PMID: 30112730 Free PMC article.

4

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation.

Liu H, Han G, Liu Y, Tang X, Yang J, Hao Y. Liu H, et al. Among authors: hao y. Nanoscale Res Lett. 2019 Jan 8;14(1):15. doi: 10.1186/s11671-018-2847-0. Nanoscale Res Lett. 2019. PMID: 30623254 Free PMC article.

5

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications.

Peng Y, Han G, Xiao W, Wu J, Liu Y, Zhang J, Hao Y. Peng Y, et al. Among authors: hao y. Nanoscale Res Lett. 2019 Apr 1;14(1):115. doi: 10.1186/s11671-019-2943-9. Nanoscale Res Lett. 2019. PMID: 30937641 Free PMC article.

6

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf_1-xZr_xO₂.

Peng Y, Liu Y, Han G, Zhang J, Hao Y. Peng Y, et al. Among authors: hao y. Nanoscale Res Lett. 2019 Apr 4;14(1):125. doi: 10.1186/s11671-019-2927-9. Nanoscale Res Lett. 2019. PMID: 30949867 Free PMC article.

7

Ge pMOSFETs with GeO_x Passivation Formed by Ozone and Plasma Post Oxidation.

Xu Y, Han G, Liu H, Wang Y, Liu Y, Ao J, Hao Y. Xu Y, et al. Among authors: hao y. Nanoscale Res Lett. 2019 Apr 5;14(1):126. doi: 10.1186/s11671-019-2958-2. Nanoscale Res Lett. 2019. PMID: 30953229 Free PMC article.

8

Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances.

Li J, Liu Y, Han G, Zhou J, Hao Y. Li J, et al. Among authors: hao y. Nanoscale Res Lett. 2019 May 24;14(1):171. doi: 10.1186/s11671-019-3013-z. Nanoscale Res Lett. 2019. PMID: 31127388 Free PMC article.

9

High Mobility Ge pMOSFETs with ZrO₂ Dielectric: Impacts of Post Annealing.

Liu H, Han G, Liu Y, Hao Y. Liu H, et al. Among authors: hao y. Nanoscale Res Lett. 2019 Jun 11;14(1):202. doi: 10.1186/s11671-019-3037-4. Nanoscale Res Lett. 2019. PMID: 31187310 Free PMC article.

10

Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions.

Lu Q, Yu L, Liu Y, Zhang J, Han G, Hao Y. Lu Q, et al. Among authors: hao y. Materials (Basel). 2019 Aug 9;12(16):2532. doi: 10.3390/ma12162532. Materials (Basel). 2019. PMID: 31395796 Free PMC article.

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