Ng TK - Search Results

1

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors.

Liang JW, Firdaus Y, Kang CH, Min JW, Min JH, Al Ibrahim RH, Wehbe N, Hedhili MN, Kaltsas D, Tsetseris L, Lopatin S, Zheng S, Ng TK, Anthopoulos TD, Ooi BS. Liang JW, et al. Among authors: ng tk. ACS Appl Mater Interfaces. 2022 Apr 20;14(15):17889-17898. doi: 10.1021/acsami.1c22075. Epub 2022 Apr 11. ACS Appl Mater Interfaces. 2022. PMID: 35404567 Free PMC article.

2

Effect of the number of stacking layers on the characteristics of quantum-dash lasers.

Khan MZ, Ng TK, Schwingenschlogl U, Bhattacharya P, Ooi BS. Khan MZ, et al. Among authors: ng tk. Opt Express. 2011 Jul 4;19(14):13378-85. doi: 10.1364/OE.19.013378. Opt Express. 2011. PMID: 21747493 Free article.

3

Room temperature strong coupling effects from single ZnO nanowire microcavity.

Das A, Heo J, Bayraktaroglu A, Guo W, Ng TK, Phillips J, Ooi BS, Bhattacharya P. Das A, et al. Among authors: ng tk. Opt Express. 2012 May 21;20(11):11830-7. doi: 10.1364/OE.20.011830. Opt Express. 2012. PMID: 22714170 Free article.

4

Two-step controllable electrochemical etching of tungsten scanning probe microscopy tips.

Khan Y, Al-Falih H, Zhang Y, Ng TK, Ooi BS. Khan Y, et al. Among authors: ng tk. Rev Sci Instrum. 2012 Jun;83(6):063708. doi: 10.1063/1.4730045. Rev Sci Instrum. 2012. PMID: 22755635

5

On the phenomenon of large photoluminescence red shift in GaN nanoparticles.

Slimane AB, Najar A, Elafandy R, San-Román-Alerigi DP, Anjum D, Ng TK, Ooi BS. Slimane AB, et al. Among authors: ng tk. Nanoscale Res Lett. 2013 Jul 31;8(1):342. doi: 10.1186/1556-276X-8-342. Nanoscale Res Lett. 2013. PMID: 23902709 Free PMC article.

6

Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing.

Shen C, Ng TK, Ooi BS. Shen C, et al. Among authors: ng tk. Opt Express. 2015 Mar 23;23(6):7991-8. doi: 10.1364/OE.23.007991. Opt Express. 2015. PMID: 25837136 Free article.

7

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

Zhao C, Ng TK, Prabaswara A, Conroy M, Jahangir S, Frost T, O'Connell J, Holmes JD, Parbrook PJ, Bhattacharya P, Ooi BS. Zhao C, et al. Among authors: ng tk. Nanoscale. 2015 Oct 28;7(40):16658-65. doi: 10.1039/c5nr03448e. Nanoscale. 2015. PMID: 26242178

8

Air-Stable Surface-Passivated Perovskite Quantum Dots for Ultra-Robust, Single- and Two-Photon-Induced Amplified Spontaneous Emission.

Pan J, Sarmah SP, Murali B, Dursun I, Peng W, Parida MR, Liu J, Sinatra L, Alyami N, Zhao C, Alarousu E, Ng TK, Ooi BS, Bakr OM, Mohammed OF. Pan J, et al. Among authors: ng tk. J Phys Chem Lett. 2015 Dec 17;6(24):5027-33. doi: 10.1021/acs.jpclett.5b02460. Epub 2015 Dec 7. J Phys Chem Lett. 2015. PMID: 26624490

9

Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters.

Zhao C, Ng TK, Wei N, Prabaswara A, Alias MS, Janjua B, Shen C, Ooi BS. Zhao C, et al. Among authors: ng tk. Nano Lett. 2016 Feb 10;16(2):1056-63. doi: 10.1021/acs.nanolett.5b04190. Epub 2016 Jan 14. Nano Lett. 2016. PMID: 26745217 Free article.

10

Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy.

Khan JI, Adhikari A, Sun J, Priante D, Bose R, Shaheen BS, Ng TK, Zhao C, Bakr OM, Ooi BS, Mohammed OF. Khan JI, et al. Among authors: ng tk. Small. 2016 May;12(17):2313-20. doi: 10.1002/smll.201503651. Epub 2016 Mar 3. Small. 2016. PMID: 26938476

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