Zhao JS - Search Results

1

Polyelectrolyte Bilayer-Based Transparent and Flexible Memristor for Emulating Synapses.

Ren J, Liang H, Li J, Li YC, Mi W, Zhou L, Sun Z, Xue S, Cai G, Zhao JS. Ren J, et al. Among authors: zhao js. ACS Appl Mater Interfaces. 2022 Mar 30;14(12):14541-14549. doi: 10.1021/acsami.1c24331. Epub 2022 Mar 9. ACS Appl Mater Interfaces. 2022. PMID: 35262345

2

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO₂/Al/Polyimide Structure.

Zhao J, Zhang M, Wan S, Yang Z, Hwang CS. Zhao J, et al. ACS Appl Mater Interfaces. 2018 Jan 17;10(2):1828-1835. doi: 10.1021/acsami.7b16214. Epub 2018 Jan 2. ACS Appl Mater Interfaces. 2018. PMID: 29256591

3

Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaO_x Film.

Chen Y, Yan Y, Wu J, Wang C, Lin JY, Zhao JS, Hwang CS. Chen Y, et al. Among authors: zhao js. ACS Appl Mater Interfaces. 2020 Mar 4;12(9):10681-10688. doi: 10.1021/acsami.9b22687. Epub 2020 Feb 21. ACS Appl Mater Interfaces. 2020. PMID: 32043349

4

Flexible Ta/TiO_x/TaO_x/Ru memristive synaptic devices on polyimide substrates.

Li J, Hao C, Guo S, Li Y, Ren J, Zhou L, Zhao J. Li J, et al. Nanotechnology. 2021 May 28;32(33). doi: 10.1088/1361-6528/ac00e0. Nanotechnology. 2021. PMID: 33984854

5

Area-Type Electronic Bipolar Switching Al/TiO_1.7/TiO₂/Al Memory with Linear Potentiation and Depression Characteristics.

Yan Y, Li JC, Chen YT, Wang XY, Cai GR, Park HW, Kim JH, Zhao JS, Hwang CS. Yan Y, et al. Among authors: zhao js. ACS Appl Mater Interfaces. 2021 Aug 25;13(33):39561-39572. doi: 10.1021/acsami.1c09436. Epub 2021 Aug 11. ACS Appl Mater Interfaces. 2021. PMID: 34378371

6

Evaluating charge-type of polyelectrolyte as dielectric layer in memristor and synapse emulation.

Shi J, Kang S, Feng J, Fan J, Xue S, Cai G, Zhao JS. Shi J, et al. Among authors: zhao js. Nanoscale Horiz. 2023 Mar 27;8(4):509-515. doi: 10.1039/d2nh00524g. Nanoscale Horiz. 2023. PMID: 36757200

7

An artificial optoelectronic synapse based on MoO_xfilm.

Zhao J, Zheng S, Zhou L, Mi W, Ding Y, Wang M. Zhao J, et al. Nanotechnology. 2023 Jan 25;34(14). doi: 10.1088/1361-6528/acb217. Nanotechnology. 2023. PMID: 36630707

8

Low-Operating-Voltage Resistive Memory Based on Bi_1+δFe_0.95Zn_0.05)O₃ Films.

Li Z, Yang Z, Wu J, Zhou B, Bao Q, Zhang K, Zhao J, Wei J. Li Z, et al. J Nanosci Nanotechnol. 2019 Jan 1;19(1):231-234. doi: 10.1166/jnn.2019.16460. J Nanosci Nanotechnol. 2019. PMID: 30327028

9

Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures.

Jiang H, Li XY, Chen R, Shao XL, Yoon JH, Hu X, Hwang CS, Zhao J. Jiang H, et al. Sci Rep. 2016 Feb 26;6:22216. doi: 10.1038/srep22216. Sci Rep. 2016. PMID: 26916050 Free PMC article.

10

Thin TiO_x layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta₂O₅/Ta resistance switching memory.

Li XY, Shao XL, Wang YC, Jiang H, Hwang CS, Zhao JS. Li XY, et al. Among authors: zhao js. Nanoscale. 2017 Feb 9;9(6):2358-2368. doi: 10.1039/c6nr08470b. Nanoscale. 2017. PMID: 28144676

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