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Aliovalent Doping Engineering for A- and B-Sites with Multiple Regulatory Mechanisms: A Strategy to Improve Energy Storage Properties of Sr0.7Bi0.2TiO3-Based Lead-Free Relaxor Ferroelectric Ceramics.
Zhao P, Fang Z, Zhang X, Chen J, Shen Y, Zhang X, An Q, Yang C, Gao X, Zhang S, Tang B. Zhao P, et al. Among authors: gao x. ACS Appl Mater Interfaces. 2021 Jun 2;13(21):24833-24855. doi: 10.1021/acsami.1c04274. Epub 2021 May 20. ACS Appl Mater Interfaces. 2021. PMID: 34014637
Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films.
Zhang Y, Fan Z, Wang D, Wang J, Zou Z, Li Y, Li Q, Tao R, Chen D, Zeng M, Gao X, Dai J, Zhou G, Lu X, Liu JM. Zhang Y, et al. Among authors: gao x. ACS Appl Mater Interfaces. 2020 Sep 9;12(36):40510-40517. doi: 10.1021/acsami.0c10964. Epub 2020 Aug 26. ACS Appl Mater Interfaces. 2020. PMID: 32805812
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