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High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film.
Choi CH, Kim T, Ueda S, Shiah YS, Hosono H, Kim J, Jeong JK. Choi CH, et al. Among authors: shiah ys. ACS Appl Mater Interfaces. 2021 Jun 23;13(24):28451-28461. doi: 10.1021/acsami.1c04210. Epub 2021 Jun 11. ACS Appl Mater Interfaces. 2021. PMID: 34111928