Chuang HJ - Search Results

1

Low-Temperature 2D/2D Ohmic Contacts in WSe₂ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition.

Stanley LJ, Chuang HJ, Zhou Z, Koehler MR, Yan J, Mandrus DG, Popović D. Stanley LJ, et al. Among authors: chuang hj. ACS Appl Mater Interfaces. 2021 Mar 3;13(8):10594-10602. doi: 10.1021/acsami.0c21440. Epub 2021 Feb 22. ACS Appl Mater Interfaces. 2021. PMID: 33617715

2

Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating.

Perera MM, Lin MW, Chuang HJ, Chamlagain BP, Wang C, Tan X, Cheng MM, Tománek D, Zhou Z. Perera MM, et al. Among authors: chuang hj. ACS Nano. 2013 May 28;7(5):4449-58. doi: 10.1021/nn401053g. Epub 2013 Apr 23. ACS Nano. 2013. PMID: 23590723

3

Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate.

Chamlagain B, Li Q, Ghimire NJ, Chuang HJ, Perera MM, Tu H, Xu Y, Pan M, Xiao D, Yan J, Mandrus D, Zhou Z. Chamlagain B, et al. Among authors: chuang hj. ACS Nano. 2014 May 27;8(5):5079-88. doi: 10.1021/nn501150r. Epub 2014 Apr 16. ACS Nano. 2014. PMID: 24730685

4

High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts.

Chuang HJ, Tan X, Ghimire NJ, Perera MM, Chamlagain B, Cheng MM, Yan J, Mandrus D, Tománek D, Zhou Z. Chuang HJ, et al. Nano Lett. 2014 Jun 11;14(6):3594-601. doi: 10.1021/nl501275p. Epub 2014 May 22. Nano Lett. 2014. PMID: 24844426

5

Polarized photocurrent response in black phosphorus field-effect transistors.

Hong T, Chamlagain B, Lin W, Chuang HJ, Pan M, Zhou Z, Xu YQ. Hong T, et al. Among authors: chuang hj. Nanoscale. 2014 Aug 7;6(15):8978-83. doi: 10.1039/c4nr02164a. Nanoscale. 2014. PMID: 24967826

6

Anisotropic photocurrent response at black phosphorus-MoS2 p-n heterojunctions.

Hong T, Chamlagain B, Wang T, Chuang HJ, Zhou Z, Xu YQ. Hong T, et al. Among authors: chuang hj. Nanoscale. 2015 Nov 28;7(44):18537-41. doi: 10.1039/c5nr03400k. Epub 2015 Oct 22. Nanoscale. 2015. PMID: 26489362

7

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.

Chuang HJ, Chamlagain B, Koehler M, Perera MM, Yan J, Mandrus D, Tománek D, Zhou Z. Chuang HJ, et al. Nano Lett. 2016 Mar 9;16(3):1896-902. doi: 10.1021/acs.nanolett.5b05066. Epub 2016 Feb 10. Nano Lett. 2016. PMID: 26844954

8

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics.

Cui Q, Sakhdari M, Chamlagain B, Chuang HJ, Liu Y, Cheng MM, Zhou Z, Chen PY. Cui Q, et al. Among authors: chuang hj. ACS Appl Mater Interfaces. 2016 Dec 21;8(50):34552-34558. doi: 10.1021/acsami.6b11302. Epub 2016 Dec 7. ACS Appl Mater Interfaces. 2016. PMID: 27998149

9

Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment.

Guan J, Chuang HJ, Zhou Z, Tománek D. Guan J, et al. Among authors: chuang hj. ACS Nano. 2017 Apr 25;11(4):3904-3910. doi: 10.1021/acsnano.7b00285. Epub 2017 Mar 23. ACS Nano. 2017. PMID: 28319662

10

Nano-"Squeegee" for the Creation of Clean 2D Material Interfaces.

Rosenberger MR, Chuang HJ, McCreary KM, Hanbicki AT, Sivaram SV, Jonker BT. Rosenberger MR, et al. Among authors: chuang hj. ACS Appl Mater Interfaces. 2018 Mar 28;10(12):10379-10387. doi: 10.1021/acsami.8b01224. Epub 2018 Mar 15. ACS Appl Mater Interfaces. 2018. PMID: 29510025

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