Zhang DW - Search Results

1

MoS₂-on-AlN Enables High-Performance MoS₂ Field-Effect Transistors through Strain Engineering.

Gu Z, Zhang T, Luo J, Wang Y, Liu H, Chen L, Liu X, Yu W, Zhu H, Sun QQ, Zhang DW. Gu Z, et al. Among authors: zhang t, zhang dw. ACS Appl Mater Interfaces. 2020 Dec 9;12(49):54972-54979. doi: 10.1021/acsami.0c16079. Epub 2020 Nov 30. ACS Appl Mater Interfaces. 2020. PMID: 33253522

2

Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage.

Li LJ, Zhu B, Ding SJ, Lu HL, Sun QQ, Jiang A, Zhang DW, Zhu C. Li LJ, et al. Among authors: zhang dw. Nanoscale Res Lett. 2012 Oct 2;7(1):544. doi: 10.1186/1556-276X-7-544. Nanoscale Res Lett. 2012. PMID: 23031347 Free PMC article.

3

Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications.

Ding SJ, Chen HB, Cui XM, Chen S, Sun QQ, Zhou P, Lu HL, Zhang DW, Shen C. Ding SJ, et al. Among authors: zhang dw. Nanoscale Res Lett. 2013 Feb 15;8(1):80. doi: 10.1186/1556-276X-8-80. Nanoscale Res Lett. 2013. PMID: 23413837 Free PMC article.

4

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition.

Fang RC, Sun QQ, Zhou P, Yang W, Wang PF, Zhang DW. Fang RC, et al. Among authors: zhang dw. Nanoscale Res Lett. 2013 Feb 19;8(1):92. doi: 10.1186/1556-276X-8-92. Nanoscale Res Lett. 2013. PMID: 23421424 Free PMC article.

5

Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition.

Gu YZ, Lu HL, Geng Y, Ye ZY, Zhang Y, Sun QQ, Ding SJ, Zhang DW. Gu YZ, et al. Among authors: zhang dw, zhang y. Nanoscale Res Lett. 2013 Feb 27;8(1):107. doi: 10.1186/1556-276X-8-107. Nanoscale Res Lett. 2013. PMID: 23442741 Free PMC article.

6

Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition.

Ye ZY, Lu HL, Geng Y, Gu YZ, Xie ZY, Zhang Y, Sun QQ, Ding SJ, Zhang DW. Ye ZY, et al. Among authors: zhang dw, zhang y. Nanoscale Res Lett. 2013 Feb 27;8(1):108. doi: 10.1186/1556-276X-8-108. Nanoscale Res Lett. 2013. PMID: 23442766 Free PMC article.

7

Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer.

Zheng S, Sun QQ, Yang W, Zhou P, Lu HL, Zhang DW. Zheng S, et al. Among authors: zhang dw. Nanoscale Res Lett. 2013 Mar 2;8(1):116. doi: 10.1186/1556-276X-8-116. Nanoscale Res Lett. 2013. PMID: 23452618 Free PMC article.

8

A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation.

Wang PF, Lin X, Liu L, Sun QQ, Zhou P, Liu XY, Liu W, Gong Y, Zhang DW. Wang PF, et al. Among authors: zhang dw. Science. 2013 Aug 9;341(6146):640-3. doi: 10.1126/science.1240961. Science. 2013. PMID: 23929978

9

Atomic scale investigation of a graphene nano-ribbon based high efficiency spin valve.

Sun QQ, Wang LH, Yang W, Zhou P, Wang PF, Ding SJ, Zhang DW. Sun QQ, et al. Among authors: zhang dw. Sci Rep. 2013 Oct 16;3:2921. doi: 10.1038/srep02921. Sci Rep. 2013. PMID: 24132194 Free PMC article.

10

Direct deposition of uniform high-κ dielectrics on graphene.

Zhou P, Yang S, Sun Q, Chen L, Wang P, Ding S, Zhang DW. Zhou P, et al. Among authors: zhang dw. Sci Rep. 2014 Sep 29;4:6448. doi: 10.1038/srep06448. Sci Rep. 2014. PMID: 25264077 Free PMC article.

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