You S - Search Results

1

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.

Mukherjee K, De Santi C, Borga M, You S, Geens K, Bakeroot B, Decoutere S, Meneghesso G, Zanoni E, Meneghini M. Mukherjee K, et al. Among authors: you s. Materials (Basel). 2020 Oct 23;13(21):4740. doi: 10.3390/ma13214740. Materials (Basel). 2020. PMID: 33114060 Free PMC article.

2

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs.

Wang J, Chen Z, You S, Bakeroot B, Liu J, Decoutere S. Wang J, et al. Among authors: you s. Micromachines (Basel). 2021 Feb 15;12(2):199. doi: 10.3390/mi12020199. Micromachines (Basel). 2021. PMID: 33671856 Free PMC article.

3

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p⁺n^-n Diodes: The Road to Reliable Vertical MOSFETs.

Mukherjee K, De Santi C, Buffolo M, Borga M, You S, Geens K, Bakeroot B, Decoutere S, Gerosa A, Meneghesso G, Zanoni E, Meneghini M. Mukherjee K, et al. Among authors: you s. Micromachines (Basel). 2021 Apr 16;12(4):445. doi: 10.3390/mi12040445. Micromachines (Basel). 2021. PMID: 33923422 Free PMC article.

4

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.

Mukherjee K, De Santi C, Borga M, Geens K, You S, Bakeroot B, Decoutere S, Diehle P, Hübner S, Altmann F, Buffolo M, Meneghesso G, Zanoni E, Meneghini M. Mukherjee K, et al. Among authors: you s. Materials (Basel). 2021 Apr 29;14(9):2316. doi: 10.3390/ma14092316. Materials (Basel). 2021. PMID: 33946943 Free PMC article. Review.

5

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate.

Han Z, Li X, Wang H, Yuan J, Wang J, Wang M, Yang W, You S, Chang J, Zhang J, Hao Y. Han Z, et al. Among authors: you s. Micromachines (Basel). 2023 Apr 26;14(5):940. doi: 10.3390/mi14050940. Micromachines (Basel). 2023. PMID: 37241564 Free PMC article.

6

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.

Han Z, Li X, Wang H, Liu Y, Yang W, Lv Z, Wang M, You S, Zhang J, Hao Y. Han Z, et al. Among authors: you s. Micromachines (Basel). 2024 Jan 20;15(1):156. doi: 10.3390/mi15010156. Micromachines (Basel). 2024. PMID: 38276855 Free PMC article.

7

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric.

Zhang J, Li X, Ji J, You S, Chen L, Wang L, Li Z, Hao Y, Zhang J. Zhang J, et al. Among authors: you s. Micromachines (Basel). 2024 Aug 2;15(8):1005. doi: 10.3390/mi15081005. Micromachines (Basel). 2024. PMID: 39203656 Free PMC article.

8

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization.

Li X, Wang M, Zhang J, Gao R, Wang H, Yang W, Yuan J, You S, Chang J, Liu Z, Hao Y. Li X, et al. Among authors: you s. Micromachines (Basel). 2023 May 12;14(5):1042. doi: 10.3390/mi14051042. Micromachines (Basel). 2023. PMID: 37241665 Free PMC article.

9

Catalytic effects of iron adatoms in poly(para-phenylene) synthesis on rutile TiO₂(110).

Rostami M, Yang B, Ma X, You S, Zhou J, Zhang M, Cui X, Zhang H, Allegretti F, Wang B, Chi L, Barth JV. Rostami M, et al. Among authors: you s. Nanoscale. 2025 Jan 16. doi: 10.1039/d4nr04407j. Online ahead of print. Nanoscale. 2025. PMID: 39817853

10

An implantable system for opioid safety.

Huang HW, Chai PR, Lee S, Kerssemakers T, Imani A, Chen J, Heim M, Bo JY, Wentworth A, Sanoudos-Dramaliotis FT, Ballinger I, Maji S, Murphy M, Alexiev A, Kang GH, Fabian N, Jenkins J, Pettinari A, Ishida K, Li J, You SS, Hayward AM, Chandrakasan A, Traverso G. Huang HW, et al. Among authors: you ss. Device. 2024 Oct 18;2(10):100517. doi: 10.1016/j.device.2024.100517. Epub 2024 Aug 14. Device. 2024. PMID: 39816527 Free PMC article.

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