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Engineering of the spin on dopant process on silicon on insulator substrate.
Barri C, Mafakheri E, Fagiani L, Tavani G, Barzaghi A, Chrastina D, Fedorov A, Frigerio J, Lodari M, Scotognella F, Arduca E, Abbarchi M, Perego M, Bollani M. Barri C, et al. Nanotechnology. 2021 Jan 8;32(2):025303. doi: 10.1088/1361-6528/abbdda. Nanotechnology. 2021. PMID: 33007762
Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths.
Tavani G, Barri C, Mafakheri E, Franzò G, Celebrano M, Castriotta M, Di Giancamillo M, Ferrari G, Picciariello F, Foletto G, Agnesi C, Vallone G, Villoresi P, Sorianello V, Rotta D, Finazzi M, Bollani M, Prati E. Tavani G, et al. Among authors: barri c. Materials (Basel). 2023 Mar 15;16(6):2344. doi: 10.3390/ma16062344. Materials (Basel). 2023. PMID: 36984223 Free PMC article.