von Wenckstern H - Search Results

1

Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials.

Borgersen J, Vines L, Frodason YK, Kuznetsov A, von Wenckstern H, Grundmann M, Allen M, Zúñiga-Pérez J, Johansen KM. Borgersen J, et al. Among authors: von wenckstern h. J Phys Condens Matter. 2020 Sep 23;32(50). doi: 10.1088/1361-648X/abac8b. J Phys Condens Matter. 2020. PMID: 32756022

2

Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

Frenzel H, Lajn A, von Wenckstern H, Lorenz M, Schein F, Zhang Z, Grundmann M. Frenzel H, et al. Among authors: von wenckstern h. Adv Mater. 2010 Dec 14;22(47):5332-49. doi: 10.1002/adma.201001375. Adv Mater. 2010. PMID: 20878625 Review.

3

Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors.

Lorenz M, von Wenckstern H, Grundmann M. Lorenz M, et al. Among authors: von wenckstern h. Adv Mater. 2011 Dec 1;23(45):5383-6. doi: 10.1002/adma.201103087. Epub 2011 Oct 14. Adv Mater. 2011. PMID: 21997566

4

Interface recombination current in type II heterostructure bipolar diodes.

Grundmann M, Karsthof R, von Wenckstern H. Grundmann M, et al. Among authors: von wenckstern h. ACS Appl Mater Interfaces. 2014 Sep 10;6(17):14785-9. doi: 10.1021/am504454g. Epub 2014 Aug 21. ACS Appl Mater Interfaces. 2014. PMID: 25136986

5

Properties of Schottky Barrier Diodes on (In(x)Ga(1-x))₂O₃ for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach.

von Wenckstern H, Splith D, Werner A, Müller S, Lorenz M, Grundmann M. von Wenckstern H, et al. ACS Comb Sci. 2015 Dec 14;17(12):710-5. doi: 10.1021/acscombsci.5b00084. Epub 2015 Nov 12. ACS Comb Sci. 2015. PMID: 26492482

6

Defect segregation and optical emission in ZnO nano- and microwires.

Ruane WT, Johansen KM, Leedy KD, Look DC, von Wenckstern H, Grundmann M, Farlow GC, Brillson LJ. Ruane WT, et al. Among authors: von wenckstern h. Nanoscale. 2016 Apr 14;8(14):7631-7. doi: 10.1039/c5nr08248j. Nanoscale. 2016. PMID: 26987850

7

Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition.

Bitter S, Schlupp P, Bonholzer M, von Wenckstern H, Grundmann M. Bitter S, et al. Among authors: von wenckstern h. ACS Comb Sci. 2016 Apr 11;18(4):188-94. doi: 10.1021/acscombsci.5b00179. Epub 2016 Mar 23. ACS Comb Sci. 2016. PMID: 27004935 Free article.

8

Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Compositions.

Bitter S, Schlupp P, von Wenckstern H, Grundmann M. Bitter S, et al. Among authors: von wenckstern h. ACS Appl Mater Interfaces. 2017 Aug 9;9(31):26574-26581. doi: 10.1021/acsami.7b06836. Epub 2017 Jul 26. ACS Appl Mater Interfaces. 2017. PMID: 28685578

9

Electrical conductivity of In₂O₃ and Ga₂O₃ after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level.

Vines L, Bhoodoo C, von Wenckstern H, Grundmann M. Vines L, et al. Among authors: von wenckstern h. J Phys Condens Matter. 2018 Jan 17;30(2):025502. doi: 10.1088/1361-648X/aa9e2a. Epub 2017 Dec 13. J Phys Condens Matter. 2018. PMID: 29235447

10

Combinatorial Material Science and Strain Engineering Enabled by Pulsed Laser Deposition Using Radially Segmented Targets.

Kneiß M, Storm P, Benndorf G, Grundmann M, von Wenckstern H. Kneiß M, et al. Among authors: von wenckstern h. ACS Comb Sci. 2018 Nov 12;20(11):643-652. doi: 10.1021/acscombsci.8b00100. Epub 2018 Oct 26. ACS Comb Sci. 2018. PMID: 30350566

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