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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes.
Nanotechnology. 2020 Oct 2;31(40):405204. doi: 10.1088/1361-6528/ab9d44. Epub 2020 Jun 16.
Nanotechnology. 2020.
PMID: 32544891
Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs.
Paz-Martínez G, Íñiguez-de-la-Torre I, Sánchez-Martín H, Novoa-López JA, Hoel V, Cordier Y, Mateos J, González T.
Paz-Martínez G, et al. Among authors: sanchez martin h.
Sensors (Basel). 2022 Feb 15;22(4):1515. doi: 10.3390/s22041515.
Sensors (Basel). 2022.
PMID: 35214416
Free PMC article.
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Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature.
Pérez-Martín E, Sánchez-Martín H, González T, Mateos J, Íñiguez-de-la-Torre I.
Pérez-Martín E, et al. Among authors: sanchez martin h.
Nanotechnology. 2023 May 24;34(32). doi: 10.1088/1361-6528/acd3f8.
Nanotechnology. 2023.
PMID: 37163999
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