Yu W - Search Results

1

Phase evolution of ultra-thin Ni silicide films on CF₄ plasma immersion ion implanted Si.

Zhao LT, Liu M, Ren QH, Liu CH, Liu Q, Chen LL, Spiegel Y, Torregrosa F, Yu W, Zhao QT. Zhao LT, et al. Among authors: yu w. Nanotechnology. 2020 May 15;31(20):205201. doi: 10.1088/1361-6528/ab6d21. Epub 2020 Jan 17. Nanotechnology. 2020. PMID: 31952059

2

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

Liu X, Ang KW, Yu W, He J, Feng X, Liu Q, Jiang H, Dan Tang, Wen J, Lu Y, Liu W, Cao P, Han S, Wu J, Liu W, Wang X, Zhu D, He Z. Liu X, et al. Among authors: yu w. Sci Rep. 2016 Apr 22;6:24920. doi: 10.1038/srep24920. Sci Rep. 2016. PMID: 27102711 Free PMC article.

3

Efficient ion-slicing of InP thin film for Si-based hetero-integration.

Lin J, You T, Wang M, Huang K, Zhang S, Jia Q, Zhou M, Yu W, Zhou S, Wang X, Ou X. Lin J, et al. Among authors: yu w. Nanotechnology. 2018 Dec 14;29(50):504002. doi: 10.1088/1361-6528/aae281. Epub 2018 Sep 19. Nanotechnology. 2018. PMID: 30229744

4

Investigation of the Energy Band at the Molybdenum Disulfide and ZrO₂ Heterojunctions.

Liu X, Hu C, Li K, Wang W, Li Z, Ao J, Wu J, He W, Mao W, Liu Q, Yu W, Chung RJ. Liu X, et al. Among authors: yu w. Nanoscale Res Lett. 2018 Dec 17;13(1):405. doi: 10.1186/s11671-018-2825-6. Nanoscale Res Lett. 2018. PMID: 30560382 Free PMC article.

5

Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector.

Liu X, Wang J, Lin Y, Zhou J, Liu Q, Yu W, Cai Y, Li X, Botcha VD, Rao T, Huang S. Liu X, et al. Among authors: yu w. ACS Omega. 2022 Dec 13;7(51):48301-48309. doi: 10.1021/acsomega.2c06480. eCollection 2022 Dec 27. ACS Omega. 2022. PMID: 36591144 Free PMC article.

6

In Situ Synchrotron XRD Characterization of Piezoelectric Al_1-xSc_xN Thin Films for MEMS Applications.

Jiang W, Zhu L, Chen L, Yang Y, Yu X, Li X, Mu Z, Yu W. Jiang W, et al. Among authors: yu w, yu x. Materials (Basel). 2023 Feb 21;16(5):1781. doi: 10.3390/ma16051781. Materials (Basel). 2023. PMID: 36902897 Free PMC article.

7

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

Huang K, Jia Q, You T, Zhang R, Lin J, Zhang S, Zhou M, Zhang B, Yu W, Ou X, Wang X. Huang K, et al. Among authors: yu w. Sci Rep. 2017 Nov 8;7(1):15017. doi: 10.1038/s41598-017-15094-1. Sci Rep. 2017. PMID: 29118412 Free PMC article.

8

Engineering of self-rectifying filamentary resistive switching in LiNbO₃ single crystalline thin film via strain doping.

You T, Huang K, Zhao X, Yi A, Chen C, Ren W, Jin T, Lin J, Shuai Y, Luo W, Zhou M, Yu W, Ou X. You T, et al. Among authors: yu w. Sci Rep. 2019 Dec 13;9(1):19134. doi: 10.1038/s41598-019-55628-3. Sci Rep. 2019. PMID: 31836794 Free PMC article.

9

Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.

You T, Ou X, Niu G, Bärwolf F, Li G, Du N, Bürger D, Skorupa I, Jia Q, Yu W, Wang X, Schmidt OG, Schmidt H. You T, et al. Among authors: yu w. Sci Rep. 2015 Dec 22;5:18623. doi: 10.1038/srep18623. Sci Rep. 2015. PMID: 26692104 Free PMC article.

10

MoS₂-on-AlN Enables High-Performance MoS₂ Field-Effect Transistors through Strain Engineering.

Gu Z, Zhang T, Luo J, Wang Y, Liu H, Chen L, Liu X, Yu W, Zhu H, Sun QQ, Zhang DW. Gu Z, et al. Among authors: yu w. ACS Appl Mater Interfaces. 2020 Dec 9;12(49):54972-54979. doi: 10.1021/acsami.0c16079. Epub 2020 Nov 30. ACS Appl Mater Interfaces. 2020. PMID: 33253522

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