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Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.
Materials (Basel). 2019 Aug 14;12(16):2583. doi: 10.3390/ma12162583.
Materials (Basel). 2019.
PMID: 31416124
Free PMC article.
Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.
Kafar A, Stanczyk S, Sarzynski M, Grzanka S, Goss J, Targowski G, Nowakowska-Siwinska A, Suski T, Perlin P.
Kafar A, et al. Among authors: targowski g.
Opt Express. 2016 May 2;24(9):9673-82. doi: 10.1364/OE.24.009673.
Opt Express. 2016.
PMID: 27137581
Free article.
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Visible light communications using a directly modulated 422 nm GaN laser diode.
Watson S, Tan M, Najda SP, Perlin P, Leszczynski M, Targowski G, Grzanka S, Kelly AE.
Watson S, et al. Among authors: targowski g.
Opt Lett. 2013 Oct 1;38(19):3792-4. doi: 10.1364/OL.38.003792.
Opt Lett. 2013.
PMID: 24081054
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Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers.
Staszczak G, Gorczyca I, Grzanka E, Smalc-Koziorowska J, Targowski G, Suski T.
Staszczak G, et al. Among authors: targowski g.
Materials (Basel). 2023 Nov 27;16(23):7386. doi: 10.3390/ma16237386.
Materials (Basel). 2023.
PMID: 38068130
Free PMC article.
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