Suh D - Search Results

1

Temperature-Dependent Opacity of the Gate Field Inside MoS₂ Field-Effect Transistors.

Ji H, Ghimire MK, Lee G, Yi H, Sakong W, Gul HZ, Yun Y, Jiang J, Kim J, Joo MK, Suh D, Lim SC. Ji H, et al. Among authors: suh d. ACS Appl Mater Interfaces. 2019 Aug 14;11(32):29022-29028. doi: 10.1021/acsami.9b06715. Epub 2019 Aug 1. ACS Appl Mater Interfaces. 2019. PMID: 31313897

2

Quantum Hall conductance of graphene combined with charge-trap memory operation.

Kang H, Yun Y, Park J, Kim J, Truong TK, Kim JG, Park N, Yun H, Lee SW, Lee YH, Suh D. Kang H, et al. Among authors: suh d. Nanotechnology. 2015 Aug 28;26(34):345202. doi: 10.1088/0957-4484/26/34/345202. Nanotechnology. 2015. PMID: 26242388

3

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

Park N, Kang H, Park J, Lee Y, Yun Y, Lee JH, Lee SG, Lee YH, Suh D. Park N, et al. Among authors: suh d. ACS Nano. 2015 Nov 24;9(11):10729-36. doi: 10.1021/acsnano.5b04339. Epub 2015 Oct 26. ACS Nano. 2015. PMID: 26487348

4

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.

Park J, Kang H, Kang KT, Yun Y, Lee YH, Choi WS, Suh D. Park J, et al. Among authors: suh d. Nano Lett. 2016 Mar 9;16(3):1754-9. doi: 10.1021/acs.nanolett.5b04748. Epub 2016 Feb 15. Nano Lett. 2016. PMID: 26855043

5

Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics.

Ji H, Joo MK, Yun Y, Park JH, Lee G, Moon BH, Yi H, Suh D, Lim SC. Ji H, et al. Among authors: suh d. ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19092-9. doi: 10.1021/acsami.6b02085. Epub 2016 Jul 15. ACS Appl Mater Interfaces. 2016. PMID: 27362461

6

Large-Scale Graphene on Hexagonal-BN Hall Elements: Prediction of Sensor Performance without Magnetic Field.

Joo MK, Kim J, Park JH, Nguyen VL, Kim KK, Lee YH, Suh D. Joo MK, et al. Among authors: suh d. ACS Nano. 2016 Sep 27;10(9):8803-11. doi: 10.1021/acsnano.6b04547. Epub 2016 Sep 8. ACS Nano. 2016. PMID: 27580305

7

Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS₂/h-BN Heterostructure.

Joo MK, Moon BH, Ji H, Han GH, Kim H, Lee G, Lim SC, Suh D, Lee YH. Joo MK, et al. Among authors: suh d. Nano Lett. 2016 Oct 12;16(10):6383-6389. doi: 10.1021/acs.nanolett.6b02788. Epub 2016 Sep 26. Nano Lett. 2016. PMID: 27649454

8

Understanding Coulomb Scattering Mechanism in Monolayer MoS₂ Channel in the Presence of h-BN Buffer Layer.

Joo MK, Moon BH, Ji H, Han GH, Kim H, Lee G, Lim SC, Suh D, Lee YH. Joo MK, et al. Among authors: suh d. ACS Appl Mater Interfaces. 2017 Feb 8;9(5):5006-5013. doi: 10.1021/acsami.6b15072. Epub 2017 Jan 30. ACS Appl Mater Interfaces. 2017. PMID: 28093916

9

Ultrastretchable Analog/Digital Signal Transmission Line with Carbon Nanotube Sheets.

Lee Y, Joo MK, Le VT, Ovalle-Robles R, Lepró X, Lima MD, Suh DG, Yu HY, Lee YH, Suh D. Lee Y, et al. Among authors: suh dg, suh d. ACS Appl Mater Interfaces. 2017 Aug 9;9(31):26286-26292. doi: 10.1021/acsami.7b04406. Epub 2017 Jul 31. ACS Appl Mater Interfaces. 2017. PMID: 28726370

10

In situ multi-dimensional actuation measurement method for tensile actuation of paraffin-infiltrated multi-wall carbon nanotube yarns.

Dang DX, Truong TK, Lim SC, Suh D. Dang DX, et al. Among authors: suh d. Rev Sci Instrum. 2017 Jul;88(7):075001. doi: 10.1063/1.4990712. Rev Sci Instrum. 2017. PMID: 28764550

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