Gul HZ - Search Results

1

Temperature-Dependent Opacity of the Gate Field Inside MoS₂ Field-Effect Transistors.

Ji H, Ghimire MK, Lee G, Yi H, Sakong W, Gul HZ, Yun Y, Jiang J, Kim J, Joo MK, Suh D, Lim SC. Ji H, et al. Among authors: gul hz. ACS Appl Mater Interfaces. 2019 Aug 14;11(32):29022-29028. doi: 10.1021/acsami.9b06715. Epub 2019 Aug 1. ACS Appl Mater Interfaces. 2019. PMID: 31313897

2

Photocurrent Switching of Monolayer MoS₂ Using a Metal-Insulator Transition.

Lee JH, Gul HZ, Kim H, Moon BH, Adhikari S, Kim JH, Choi H, Lee YH, Lim SC. Lee JH, et al. Among authors: gul hz. Nano Lett. 2017 Feb 8;17(2):673-678. doi: 10.1021/acs.nanolett.6b03689. Epub 2017 Jan 3. Nano Lett. 2017. PMID: 28029262

3

Tunable Mobility in Double-Gated MoTe₂ Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.

Ji H, Joo MK, Yi H, Choi H, Gul HZ, Ghimire MK, Lim SC. Ji H, et al. Among authors: gul hz. ACS Appl Mater Interfaces. 2017 Aug 30;9(34):29185-29192. doi: 10.1021/acsami.7b05865. Epub 2017 Aug 18. ACS Appl Mater Interfaces. 2017. PMID: 28786660

4

Defect-Affected Photocurrent in MoTe₂ FETs.

Ghimire MK, Ji H, Gul HZ, Yi H, Jiang J, Lim SC. Ghimire MK, et al. Among authors: gul hz. ACS Appl Mater Interfaces. 2019 Mar 13;11(10):10068-10073. doi: 10.1021/acsami.9b00050. Epub 2019 Feb 26. ACS Appl Mater Interfaces. 2019. PMID: 30762341

5

Semimetallic Graphene for Infrared Sensing.

Gul HZ, Sakong W, Ji H, Torres J, Yi H, Ghimire MK, Yoon JH, Yun MH, Hwang HR, Lee YH, Lim SC. Gul HZ, et al. ACS Appl Mater Interfaces. 2019 May 29;11(21):19565-19571. doi: 10.1021/acsami.9b00977. Epub 2019 May 16. ACS Appl Mater Interfaces. 2019. PMID: 31045342

6

Edge Contact for Carrier Injection and Transport in MoS₂ Field-Effect Transistors.

Choi H, Moon BH, Kim JH, Yun SJ, Han GH, Lee SG, Gul HZ, Lee YH. Choi H, et al. Among authors: gul hz. ACS Nano. 2019 Nov 26;13(11):13169-13175. doi: 10.1021/acsnano.9b05965. Epub 2019 Nov 14. ACS Nano. 2019. PMID: 31714742

7

Optical Duality of Molybdenum Disulfide: Metal and Semiconductor.

Sakong W, Gul HZ, Ahn B, Oh S, Kim G, Sim E, Bahng J, Yi H, Kim M, Yun M, Lim SC. Sakong W, et al. Among authors: gul hz. Nano Lett. 2022 Jul 13;22(13):5207-5213. doi: 10.1021/acs.nanolett.2c00853. Epub 2022 Jun 21. Nano Lett. 2022. PMID: 35729739

8

One-Step Passivation of Both Sulfur Vacancies and SiO₂ Interface Traps of MoS₂ Device.

Ahn B, Kim Y, Kim M, Yu HM, Ahn J, Sim E, Ji H, Gul HZ, Kim KS, Ihm K, Lee H, Kim EK, Lim SC. Ahn B, et al. Among authors: gul hz. Nano Lett. 2023 Sep 13;23(17):7927-7933. doi: 10.1021/acs.nanolett.3c01753. Epub 2023 Aug 30. Nano Lett. 2023. PMID: 37647420

9

Investigating charge traps in MoTe₂field-effect transistors: SiO₂insulator traps and MoTe₂bulk traps.

Kim G, Dang DX, Gul HZ, Ji H, Kim EK, Lim SC. Kim G, et al. Among authors: gul hz. Nanotechnology. 2023 Oct 31;35(3). doi: 10.1088/1361-6528/ad0126. Nanotechnology. 2023. PMID: 37804823

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