Bao L - Search Results

1

Quasi-2D Transport and Weak Antilocalization Effect in Few-layered VSe₂.

Liu H, Bao L, Zhou Z, Che B, Zhang R, Bian C, Ma R, Wu L, Yang H, Li J, Gu C, Shen CM, Du S, Gao HJ. Liu H, et al. Among authors: bao l. Nano Lett. 2019 Jul 10;19(7):4551-4559. doi: 10.1021/acs.nanolett.9b01412. Epub 2019 Jun 26. Nano Lett. 2019. PMID: 31241975

2

Field emission properties of patterned boron nanocones.

Li C, Tian Y, Hui C, Tian J, Bao L, Shen C, Gao HJ. Li C, et al. Among authors: bao l. Nanotechnology. 2010 Aug 13;21(32):325705. doi: 10.1088/0957-4484/21/32/325705. Epub 2010 Jul 19. Nanotechnology. 2010. PMID: 20639582

3

Core-shell Fe3O4@SiO2 nanoparticles synthesized with well-dispersed hydrophilic Fe3O4 seeds.

Hui C, Shen C, Tian J, Bao L, Ding H, Li C, Tian Y, Shi X, Gao HJ. Hui C, et al. Among authors: bao l. Nanoscale. 2011 Feb;3(2):701-5. doi: 10.1039/c0nr00497a. Epub 2010 Nov 19. Nanoscale. 2011. PMID: 21103488

4

Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices.

Wang G, Bao L, Pei T, Ma R, Zhang YY, Sun L, Zhang G, Yang H, Li J, Gu C, Du S, Pantelides ST, Schrimpf RD, Gao HJ. Wang G, et al. Among authors: bao l. Nano Lett. 2016 Nov 9;16(11):6870-6878. doi: 10.1021/acs.nanolett.6b02704. Epub 2016 Oct 31. Nano Lett. 2016. PMID: 27786486

5

Upgrade of a commercial four-probe scanning tunneling microscopy system.

Ma R, Huan Q, Wu L, Yan J, Zou Q, Wang A, Bobisch CA, Bao L, Gao HJ. Ma R, et al. Among authors: bao l. Rev Sci Instrum. 2017 Jun;88(6):063704. doi: 10.1063/1.4986466. Rev Sci Instrum. 2017. PMID: 28668010

6

Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene.

Ma R, Huan Q, Wu L, Yan J, Guo W, Zhang YY, Wang S, Bao L, Liu Y, Du S, Pantelides ST, Gao HJ. Ma R, et al. Among authors: bao l. Nano Lett. 2017 Sep 13;17(9):5291-5296. doi: 10.1021/acs.nanolett.7b01624. Epub 2017 Aug 14. Nano Lett. 2017. PMID: 28786680

7

Thick Layered Semiconductor Devices with Water Top-Gates: High On-Off Ratio Field-Effect Transistors and Aqueous Sensors.

Huang Y, Sutter E, Wu LM, Xu H, Bao L, Gao HJ, Zhou XJ, Sutter P. Huang Y, et al. Among authors: bao l. ACS Appl Mater Interfaces. 2018 Jul 11;10(27):23198-23207. doi: 10.1021/acsami.8b05932. Epub 2018 Jun 29. ACS Appl Mater Interfaces. 2018. PMID: 29926723

8

Stable Silicene in Graphene/Silicene Van der Waals Heterostructures.

Li G, Zhang L, Xu W, Pan J, Song S, Zhang Y, Zhou H, Wang Y, Bao L, Zhang YY, Du S, Ouyang M, Pantelides ST, Gao HJ. Li G, et al. Among authors: bao l. Adv Mater. 2018 Dec;30(49):e1804650. doi: 10.1002/adma.201804650. Epub 2018 Oct 8. Adv Mater. 2018. PMID: 30368921

9

Reversible Modification of Nitrogen-Doped Graphene Based on Se-N Dynamic Covalent Bonds for Field-Effect Transistors.

Zheng N, Feng Y, Zhang Y, Li R, Bian C, Bao L, Du S, Dong H, Shen Y, Feng W. Zheng N, et al. Among authors: bao l. ACS Appl Mater Interfaces. 2019 Jul 10;11(27):24360-24366. doi: 10.1021/acsami.9b02989. Epub 2019 Jun 26. ACS Appl Mater Interfaces. 2019. PMID: 31198022

10

Tin diselenide van der Waals materials as new candidates for mid-infrared waveguide chips.

Xue M , Zheng Q , Chen R , Bao L , Du S , Chen J . Xue M , et al. Among authors: bao l. Nanoscale. 2019 Aug 1;11(30):14113-14117. doi: 10.1039/c9nr04264d. Nanoscale. 2019. PMID: 31334738

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