Schulman DS - Search Results

1

Mobility Deception in Nanoscale Transistors: An Untold Contact Story.

Nasr JR, Schulman DS, Sebastian A, Horn MW, Das S. Nasr JR, et al. Among authors: schulman ds. Adv Mater. 2019 Jan;31(2):e1806020. doi: 10.1002/adma.201806020. Epub 2018 Nov 14. Adv Mater. 2019. PMID: 30430660

2

Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors.

Arnold AJ, Schulman DS, Das S. Arnold AJ, et al. Among authors: schulman ds. ACS Nano. 2020 Oct 27;14(10):13557-13568. doi: 10.1021/acsnano.0c05572. Epub 2020 Oct 7. ACS Nano. 2020. PMID: 33026795

3

Contact engineering for 2D materials and devices.

Schulman DS , Arnold AJ , Das S . Schulman DS , et al. Chem Soc Rev. 2018 May 8;47(9):3037-3058. doi: 10.1039/c7cs00828g. Chem Soc Rev. 2018. PMID: 29498729 Review.

4

Anomalous Corrosion of Bulk Transition Metal Diselenides Leading to Stable Monolayers.

Huang YT, Dodda A, Schulman DS, Sebastian A, Zhang F, Buzzell D, Terrones M, Feng SP, Das S. Huang YT, et al. Among authors: schulman ds. ACS Appl Mater Interfaces. 2017 Nov 8;9(44):39059-39068. doi: 10.1021/acsami.7b13107. Epub 2017 Oct 26. ACS Appl Mater Interfaces. 2017. PMID: 29028313

5

Facile Electrochemical Synthesis of 2D Monolayers for High-Performance Thin-Film Transistors.

Schulman DS, Sebastian A, Buzzell D, Huang YT, Arnold AJ, Das S. Schulman DS, et al. ACS Appl Mater Interfaces. 2017 Dec 27;9(51):44617-44624. doi: 10.1021/acsami.7b14711. Epub 2017 Dec 18. ACS Appl Mater Interfaces. 2017. PMID: 29210272

6

Superior Electro-Oxidation and Corrosion Resistance of Monolayer Transition Metal Disulfides.

Schulman DS, May-Rawding D, Zhang F, Buzzell D, Alem N, Das S. Schulman DS, et al. ACS Appl Mater Interfaces. 2018 Jan 31;10(4):4285-4294. doi: 10.1021/acsami.7b17660. Epub 2018 Jan 16. ACS Appl Mater Interfaces. 2018. PMID: 29278319

7

Carbon doping of WS₂ monolayers: Bandgap reduction and p-type doping transport.

Zhang F, Lu Y, Schulman DS, Zhang T, Fujisawa K, Lin Z, Lei Y, Elias AL, Das S, Sinnott SB, Terrones M. Zhang F, et al. Among authors: schulman ds. Sci Adv. 2019 May 24;5(5):eaav5003. doi: 10.1126/sciadv.aav5003. eCollection 2019 May. Sci Adv. 2019. PMID: 31139746 Free PMC article.

8

Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS₂ Transistors.

Arnold AJ, Razavieh A, Nasr JR, Schulman DS, Eichfeld CM, Das S. Arnold AJ, et al. Among authors: schulman ds. ACS Nano. 2017 Mar 28;11(3):3110-3118. doi: 10.1021/acsnano.7b00113. Epub 2017 Mar 10. ACS Nano. 2017. PMID: 28260370

9

Defect Dynamics in 2-D MoS₂ Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy.

Patra TK, Zhang F, Schulman DS, Chan H, Cherukara MJ, Terrones M, Das S, Narayanan B, Sankaranarayanan SKRS. Patra TK, et al. Among authors: schulman ds. ACS Nano. 2018 Aug 28;12(8):8006-8016. doi: 10.1021/acsnano.8b02844. Epub 2018 Aug 8. ACS Nano. 2018. PMID: 30074765

10

Defect-Controlled Nucleation and Orientation of WSe₂ on hBN: A Route to Single-Crystal Epitaxial Monolayers.

Zhang X, Zhang F, Wang Y, Schulman DS, Zhang T, Bansal A, Alem N, Das S, Crespi VH, Terrones M, Redwing JM. Zhang X, et al. Among authors: schulman ds. ACS Nano. 2019 Mar 26;13(3):3341-3352. doi: 10.1021/acsnano.8b09230. Epub 2019 Feb 19. ACS Nano. 2019. PMID: 30758945

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