Bao W - Search Results

1

High-Performance Wafer-Scale MoS₂ Transistors toward Practical Application.

Xu H, Zhang H, Guo Z, Shan Y, Wu S, Wang J, Hu W, Liu H, Sun Z, Luo C, Wu X, Xu Z, Zhang DW, Bao W, Zhou P. Xu H, et al. Among authors: bao w. Small. 2018 Nov;14(48):e1803465. doi: 10.1002/smll.201803465. Epub 2018 Oct 16. Small. 2018. PMID: 30328296

2

Various and Tunable Transport Properties of WSe₂ Transistor Formed by Metal Contacts.

Liu C, Yan X, Zhang E, Song X, Sun Q, Ding S, Bao W, Xiu F, Zhou P, Zhang DW. Liu C, et al. Among authors: bao w. Small. 2017 May;13(18). doi: 10.1002/smll.201604319. Epub 2017 Mar 10. Small. 2017. PMID: 28296162

3

Tunable SnSe₂ /WSe₂ Heterostructure Tunneling Field Effect Transistor.

Yan X, Liu C, Li C, Bao W, Ding S, Zhang DW, Zhou P. Yan X, et al. Among authors: bao w. Small. 2017 Sep;13(34). doi: 10.1002/smll.201701478. Epub 2017 Jul 17. Small. 2017. PMID: 28714240

4

Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.

Song X, Guo Z, Zhang Q, Zhou P, Bao W, Zhang DW. Song X, et al. Among authors: bao w. Small. 2017 Sep;13(35). doi: 10.1002/smll.201700098. Epub 2017 Jul 19. Small. 2017. PMID: 28722346 Review.

5

WSe₂/MoS₂ and MoTe₂/SnSe₂ van der Waals heterostructure transistors with different band alignment.

Li C, Yan X, Song X, Bao W, Ding S, Zhang DW, Zhou P. Li C, et al. Among authors: bao w. Nanotechnology. 2017 Oct 13;28(41):415201. doi: 10.1088/1361-6528/aa810f. Epub 2017 Jul 20. Nanotechnology. 2017. PMID: 28726689

6

2D negative capacitance field-effect transistor with organic ferroelectrics.

Zhang H, Chen Y, Ding S, Wang J, Bao W, Zhang DW, Zhou P. Zhang H, et al. Among authors: bao w. Nanotechnology. 2018 Jun 15;29(24):244004. doi: 10.1088/1361-6528/aab9e6. Epub 2018 Mar 27. Nanotechnology. 2018. PMID: 29583135

7

Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe₂ Structure.

Hou X, Zhang H, Liu C, Ding S, Bao W, Zhang DW, Zhou P. Hou X, et al. Among authors: bao w. Small. 2018 May;14(20):e1800319. doi: 10.1002/smll.201800319. Epub 2018 Apr 17. Small. 2018. PMID: 29665261

8

High Performance Amplifier Element Realization via MoS₂/GaTe Heterostructures.

Yan X, Zhang DW, Liu C, Bao W, Wang S, Ding S, Zheng G, Zhou P. Yan X, et al. Among authors: bao w. Adv Sci (Weinh). 2018 Jan 15;5(4):1700830. doi: 10.1002/advs.201700830. eCollection 2018 Apr. Adv Sci (Weinh). 2018. PMID: 29721428 Free PMC article.

9

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture.

Guo Z, Chen Y, Zhang H, Wang J, Hu W, Ding S, Zhang DW, Zhou P, Bao W. Guo Z, et al. Among authors: bao w. Adv Sci (Weinh). 2018 Aug 2;5(9):1800237. doi: 10.1002/advs.201800237. eCollection 2018 Sep. Adv Sci (Weinh). 2018. PMID: 30250784 Free PMC article.

10

Wafer-scale transferred multilayer MoS₂ for high performance field effect transistors.

Zhang S, Xu H, Liao F, Sun Y, Ba K, Sun Z, Qiu ZJ, Xu Z, Zhu H, Chen L, Sun Q, Zhou P, Bao W, Zhang DW. Zhang S, et al. Among authors: bao w. Nanotechnology. 2019 Apr 26;30(17):174002. doi: 10.1088/1361-6528/aafe24. Epub 2019 Jan 14. Nanotechnology. 2019. PMID: 30641493

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