Bae H - Search Results

1

On-Chip Curing by Microwave for Long Term Usage of Electronic Devices in Harsh Environments.

Park JY, Kim WG, Bae H, Jin IK, Kim DJ, Im H, Tcho IW, Choi YK. Park JY, et al. Among authors: bae h. Sci Rep. 2018 Oct 8;8(1):14953. doi: 10.1038/s41598-018-33309-x. Sci Rep. 2018. PMID: 30297916 Free PMC article.

2

Direct Observation of a Carbon Filament in Water-Resistant Organic Memory.

Lee BH, Bae H, Seong H, Lee DI, Park H, Choi YJ, Im SG, Kim SO, Choi YK. Lee BH, et al. Among authors: bae h. ACS Nano. 2015 Jul 28;9(7):7306-13. doi: 10.1021/acsnano.5b02199. Epub 2015 Jul 1. ACS Nano. 2015. PMID: 26056735

3

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric.

Lee D, Yoon J, Lee J, Lee BH, Seol ML, Bae H, Jeon SB, Seong H, Im SG, Choi SJ, Choi YK. Lee D, et al. Among authors: bae h. Sci Rep. 2016 May 17;6:26121. doi: 10.1038/srep26121. Sci Rep. 2016. PMID: 27184121 Free PMC article.

4

Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).

Kim CK, Kim E, Lee MK, Park JY, Seol ML, Bae H, Bang T, Jeon SB, Jun S, Park SH, Choi KC, Choi YK. Kim CK, et al. Among authors: bae h. ACS Appl Mater Interfaces. 2016 Sep 14;8(36):23820-6. doi: 10.1021/acsami.6b06377. Epub 2016 Aug 29. ACS Appl Mater Interfaces. 2016. PMID: 27552134

5

Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application.

Bae H, Lee BH, Lee D, Seol ML, Kim D, Han JW, Kim CK, Jeon SB, Ahn D, Park SJ, Park JY, Choi YK. Bae H, et al. Sci Rep. 2016 Dec 5;6:38324. doi: 10.1038/srep38324. Sci Rep. 2016. PMID: 27917910 Free PMC article.

6

Foldable and Disposable Memory on Paper.

Lee BH, Lee DI, Bae H, Seong H, Jeon SB, Seol ML, Han JW, Meyyappan M, Im SG, Choi YK. Lee BH, et al. Among authors: bae h. Sci Rep. 2016 Dec 6;6:38389. doi: 10.1038/srep38389. Sci Rep. 2016. PMID: 27922094 Free PMC article.

7

Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation.

Kim CK, Jeong EG, Kim E, Song JG, Kim Y, Woo WJ, Lee MK, Bae H, Jeon SB, Kim H, Choi KC, Choi YK. Kim CK, et al. Among authors: bae h. Nanotechnology. 2017 Feb 3;28(5):055203. doi: 10.1088/1361-6528/aa5235. Epub 2016 Dec 28. Nanotechnology. 2017. PMID: 28029109

8

Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics.

Bae H, Jang BC, Park H, Jung SH, Lee HM, Park JY, Jeon SB, Son G, Tcho IW, Yu K, Im SG, Choi SY, Choi YK. Bae H, et al. Nano Lett. 2017 Oct 11;17(10):6443-6452. doi: 10.1021/acs.nanolett.7b03435. Epub 2017 Sep 18. Nano Lett. 2017. PMID: 28892637

9

Nano-electromechanical Switch Based on a Physical Unclonable Function for Highly Robust and Stable Performance in Harsh Environments.

Hwang KM, Park JY, Bae H, Lee SW, Kim CK, Seo M, Im H, Kim DH, Kim SY, Lee GB, Choi YK. Hwang KM, et al. Among authors: bae h. ACS Nano. 2017 Dec 26;11(12):12547-12552. doi: 10.1021/acsnano.7b06658. Epub 2017 Dec 13. ACS Nano. 2017. PMID: 29235347

10

Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor.

Park JY, Lee BH, Lee GB, Bae H, Choi YK. Park JY, et al. Among authors: bae h. ACS Appl Mater Interfaces. 2018 Feb 7;10(5):4838-4843. doi: 10.1021/acsami.7b17794. Epub 2018 Jan 23. ACS Appl Mater Interfaces. 2018. PMID: 29323476

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