Renard C - Search Results

1

Crystalline, Phononic, and Electronic Properties of Heterostructured Polytypic Ge Nanowires by Raman Spectroscopy.

Fasolato C, De Luca M, Djomani D, Vincent L, Renard C, Di Iorio G, Paillard V, Amato M, Rurali R, Zardo I. Fasolato C, et al. Among authors: renard c. Nano Lett. 2018 Nov 14;18(11):7075-7084. doi: 10.1021/acs.nanolett.8b03073. Epub 2018 Sep 10. Nano Lett. 2018. PMID: 30185053

2

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires.

Vincent L, Boukhicha R, Cherkashin N, Reboh S, Patriarche G, Renard C, Yam V, Fossard F, Bouchier D. Vincent L, et al. Among authors: renard c. Nanotechnology. 2012 Oct 5;23(39):395701. doi: 10.1088/0957-4484/23/39/395701. Epub 2012 Sep 7. Nanotechnology. 2012. PMID: 22962281

3

Novel heterostructured Ge nanowires based on polytype transformation.

Vincent L, Patriarche G, Hallais G, Renard C, Gardès C, Troadec D, Bouchier D. Vincent L, et al. Among authors: renard c. Nano Lett. 2014 Aug 13;14(8):4828-36. doi: 10.1021/nl502049a. Epub 2014 Jul 8. Nano Lett. 2014. PMID: 24988041

4

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

Renard C, Molière T, Cherkashin N, Alvarez J, Vincent L, Jaffré A, Hallais G, Connolly JP, Mencaraglia D, Bouchier D. Renard C, et al. Sci Rep. 2016 May 4;6:25328. doi: 10.1038/srep25328. Sci Rep. 2016. PMID: 27142097 Free PMC article.

5

Shear-driven phase transformation in silicon nanowires.

Vincent L, Djomani D, Fakfakh M, Renard C, Belier B, Bouchier D, Patriarche G. Vincent L, et al. Among authors: renard c. Nanotechnology. 2018 Mar 23;29(12):125601. doi: 10.1088/1361-6528/aaa738. Nanotechnology. 2018. PMID: 29328052

6

Atypical reversed pressure-induced phase transformation in Ge nanowires.

Djomani D, Capitani F, Brubach JB, Calandrini E, Renard C, Bouchier D, Itié JP, Roy P, Vincent L. Djomani D, et al. Among authors: renard c. Nanotechnology. 2020 Mar 20;31(23):235711. doi: 10.1088/1361-6528/ab7b06. Epub 2020 Feb 28. Nanotechnology. 2020. PMID: 32109895

7

Hexagonal silicon-germanium nanowire branches with tunable composition.

Li A, Hauge HIT, Verheijen MA, Bakkers EPAM, Tucker RT, Vincent L, Renard C. Li A, et al. Among authors: renard c. Nanotechnology. 2022 Oct 12;34(1). doi: 10.1088/1361-6528/ac9317. Nanotechnology. 2022. PMID: 36126589

8

Corrigendum: Hexagonal silicon-germanium nanowire branches with tunable composition (2023Nanotechnology34 015601).

Li A, Hauge HIT, Verheijen MA, Bakkers EPAM, Tucker RT, Vincent L, Renard C. Li A, et al. Among authors: renard c. Nanotechnology. 2024 Jun 28;35(37). doi: 10.1088/1361-6528/ad5689. Nanotechnology. 2024. PMID: 38949609 No abstract available.

9

Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

Renard C, Molière T, Cherkashin N, Alvarez J, Vincent L, Jaffré A, Hallais G, Connolly JP, Mencaraglia D, Bouchier D. Renard C, et al. Sci Rep. 2016 Sep 22;6:29875. doi: 10.1038/srep29875. Sci Rep. 2016. PMID: 27653206 Free PMC article. No abstract available.

10

In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy.

Diallo TM, Aziziyan MR, Arvinte R, Harmand JC, Patriarche G, Renard C, Fafard S, Arès R, Boucherif A. Diallo TM, et al. Among authors: renard c. Small. 2022 Feb;18(5):e2101890. doi: 10.1002/smll.202101890. Epub 2021 Nov 10. Small. 2022. PMID: 34761502

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