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12 results

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Page 1
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red.
Roche E, André Y, Avit G, Bougerol C, Castelluci D, Réveret F, Gil E, Médard F, Leymarie J, Jean T, Dubrovskii VG, Trassoudaine A. Roche E, et al. Among authors: trassoudaine a. Nanotechnology. 2018 Nov 16;29(46):465602. doi: 10.1088/1361-6528/aaddc1. Epub 2018 Aug 30. Nanotechnology. 2018. PMID: 30160245
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.
Dong Z, André Y, Dubrovskii VG, Bougerol C, Leroux C, Ramdani MR, Monier G, Trassoudaine A, Castelluci D, Gil E. Dong Z, et al. Among authors: trassoudaine a. Nanotechnology. 2017 Mar 24;28(12):125602. doi: 10.1088/1361-6528/aa5c6b. Epub 2017 Jan 31. Nanotechnology. 2017. PMID: 28140362
Compositional control of homogeneous InGaN nanowires with the In content up to 90.
Zeghouane M, Avit G, André Y, Bougerol C, Robin Y, Ferret P, Castelluci D, Gil E, Dubrovskii VG, Amano H, Trassoudaine A. Zeghouane M, et al. Among authors: trassoudaine a. Nanotechnology. 2019 Jan 25;30(4):044001. doi: 10.1088/1361-6528/aaec39. Epub 2018 Nov 20. Nanotechnology. 2019. PMID: 30457977
Ultralong and defect-free GaN nanowires grown by the HVPE process.
Avit G, Lekhal K, André Y, Bougerol C, Réveret F, Leymarie J, Gil E, Monier G, Castelluci D, Trassoudaine A. Avit G, et al. Among authors: trassoudaine a. Nano Lett. 2014 Feb 12;14(2):559-62. doi: 10.1021/nl403687h. Epub 2014 Jan 10. Nano Lett. 2014. PMID: 24393103
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.
Gil E, Dubrovskii VG, Avit G, André Y, Leroux C, Lekhal K, Grecenkov J, Trassoudaine A, Castelluci D, Monier G, Ramdani RM, Robert-Goumet C, Bideux L, Harmand JC, Glas F. Gil E, et al. Among authors: trassoudaine a. Nano Lett. 2014 Jul 9;14(7):3938-44. doi: 10.1021/nl501239h. Epub 2014 Jun 3. Nano Lett. 2014. PMID: 24873917
Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG. Hijazi H, et al. Among authors: trassoudaine a. Nano Lett. 2019 Jul 10;19(7):4498-4504. doi: 10.1021/acs.nanolett.9b01308. Epub 2019 Jun 20. Nano Lett. 2019. PMID: 31203632
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E. André Y, et al. Among authors: trassoudaine a. J Chem Phys. 2014 May 21;140(19):194706. doi: 10.1063/1.4874875. J Chem Phys. 2014. PMID: 24852556
Fast growth synthesis of GaAs nanowires with exceptional length.
Ramdani MR, Gil E, Leroux Ch, André Y, Trassoudaine A, Castelluci D, Bideux L, Monier G, Robert-Goumet C, Kupka R. Ramdani MR, et al. Among authors: trassoudaine a. Nano Lett. 2010 May 12;10(5):1836-41. doi: 10.1021/nl100557d. Nano Lett. 2010. PMID: 20380477
12 results