Okuno H - Search Results

1

Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe₂ monolayer.

Alvarez CJ, Dau MT, Marty A, Vergnaud C, Le Poche H, Pochet P, Jamet M, Okuno H. Alvarez CJ, et al. Among authors: okuno h. Nanotechnology. 2018 Oct 19;29(42):425706. doi: 10.1088/1361-6528/aad66f. Epub 2018 Jul 27. Nanotechnology. 2018. PMID: 30052205

2

Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface.

Oyarzún S, Nandy AK, Rortais F, Rojas-Sánchez JC, Dau MT, Noël P, Laczkowski P, Pouget S, Okuno H, Vila L, Vergnaud C, Beigné C, Marty A, Attané JP, Gambarelli S, George JM, Jaffrès H, Blügel S, Jamet M. Oyarzún S, et al. Among authors: okuno h. Nat Commun. 2016 Dec 15;7:13857. doi: 10.1038/ncomms13857. Nat Commun. 2016. PMID: 27976747 Free PMC article.

3

Massless Dirac Fermions in ZrTe₂ Semimetal Grown on InAs(111) by van der Waals Epitaxy.

Tsipas P, Tsoutsou D, Fragkos S, Sant R, Alvarez C, Okuno H, Renaud G, Alcotte R, Baron T, Dimoulas A. Tsipas P, et al. Among authors: okuno h. ACS Nano. 2018 Feb 27;12(2):1696-1703. doi: 10.1021/acsnano.7b08350. Epub 2018 Jan 17. ACS Nano. 2018. PMID: 29314824

4

Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC.

Feldberg N, Klymov O, Garro N, Cros A, Mollard N, Okuno H, Gruart M, Daudin B. Feldberg N, et al. Among authors: okuno h. Nanotechnology. 2019 Sep 13;30(37):375602. doi: 10.1088/1361-6528/ab261f. Epub 2019 May 31. Nanotechnology. 2019. PMID: 31151128

5

Growth of Nb-Doped Monolayer WS₂ by Liquid-Phase Precursor Mixing.

Qin Z, Loh L, Wang J, Xu X, Zhang Q, Haas B, Alvarez C, Okuno H, Yong JZ, Schultz T, Koch N, Dan J, Pennycook SJ, Zeng D, Bosman M, Eda G. Qin Z, et al. Among authors: okuno h. ACS Nano. 2019 Sep 24;13(9):10768-10775. doi: 10.1021/acsnano.9b05574. Epub 2019 Sep 13. ACS Nano. 2019. PMID: 31491079

6

Remote epitaxy using graphene enables growth of stress-free GaN.

Journot T, Okuno H, Mollard N, Michon A, Dagher R, Gergaud P, Dijon J, Kolobov AV, Hyot B. Journot T, et al. Among authors: okuno h. Nanotechnology. 2019 Dec 13;30(50):505603. doi: 10.1088/1361-6528/ab4501. Epub 2019 Sep 16. Nanotechnology. 2019. PMID: 31530744

7

Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy.

Gruart M, Feldberg N, Gayral B, Bougerol C, Pouget S, Bellet-Amalric E, Garro N, Cros A, Okuno H, Daudin B. Gruart M, et al. Among authors: okuno h. Nanotechnology. 2020 Mar 13;31(11):115602. doi: 10.1088/1361-6528/ab5c15. Epub 2019 Nov 27. Nanotechnology. 2020. PMID: 31774414

8

The valley Nernst effect in WSe₂.

Dau MT, Vergnaud C, Marty A, Beigné C, Gambarelli S, Maurel V, Journot T, Hyot B, Guillet T, Grévin B, Okuno H, Jamet M. Dau MT, et al. Among authors: okuno h. Nat Commun. 2019 Dec 19;10(1):5796. doi: 10.1038/s41467-019-13590-8. Nat Commun. 2019. PMID: 31857586 Free PMC article.

9

New approach for the molecular beam epitaxy growth of scalable WSe₂ monolayers.

Vergnaud C, Dau MT, Grévin B, Licitra C, Marty A, Okuno H, Jamet M. Vergnaud C, et al. Among authors: okuno h. Nanotechnology. 2020 Apr 3;31(25):255602. doi: 10.1088/1361-6528/ab80fe. Epub 2020 Mar 18. Nanotechnology. 2020. PMID: 32187582

10

Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe_{2}.

Mallet P, Chiapello F, Okuno H, Boukari H, Jamet M, Veuillen JY. Mallet P, et al. Among authors: okuno h. Phys Rev Lett. 2020 Jul 17;125(3):036802. doi: 10.1103/PhysRevLett.125.036802. Phys Rev Lett. 2020. PMID: 32745415

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