Gao HJ - Search Results

1

Thick Layered Semiconductor Devices with Water Top-Gates: High On-Off Ratio Field-Effect Transistors and Aqueous Sensors.

Huang Y, Sutter E, Wu LM, Xu H, Bao L, Gao HJ, Zhou XJ, Sutter P. Huang Y, et al. Among authors: gao hj. ACS Appl Mater Interfaces. 2018 Jul 11;10(27):23198-23207. doi: 10.1021/acsami.8b05932. Epub 2018 Jun 29. ACS Appl Mater Interfaces. 2018. PMID: 29926723

2

Field emission properties of patterned boron nanocones.

Li C, Tian Y, Hui C, Tian J, Bao L, Shen C, Gao HJ. Li C, et al. Among authors: gao hj. Nanotechnology. 2010 Aug 13;21(32):325705. doi: 10.1088/0957-4484/21/32/325705. Epub 2010 Jul 19. Nanotechnology. 2010. PMID: 20639582

3

Surface-step-terrace-induced anomalous transport properties in highly epitaxial La0.67Ca0.33MnO3 thin films.

Lu H, Zhang C, Guo H, Gao H, Liu M, Liu J, Collins G, Chen C. Lu H, et al. ACS Appl Mater Interfaces. 2010 Sep;2(9):2496-9. doi: 10.1021/am100542n. ACS Appl Mater Interfaces. 2010. PMID: 20806782

4

Core-shell Fe3O4@SiO2 nanoparticles synthesized with well-dispersed hydrophilic Fe3O4 seeds.

Hui C, Shen C, Tian J, Bao L, Ding H, Li C, Tian Y, Shi X, Gao HJ. Hui C, et al. Among authors: gao hj. Nanoscale. 2011 Feb;3(2):701-5. doi: 10.1039/c0nr00497a. Epub 2010 Nov 19. Nanoscale. 2011. PMID: 21103488

5

A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials.

Jiang L, Wu B, Liu H, Huang Y, Chen J, Geng D, Gao H, Liu Y. Jiang L, et al. Adv Mater. 2013 Dec 23;25(48):7015-9. doi: 10.1002/adma.201302941. Epub 2013 Oct 7. Adv Mater. 2013. PMID: 24123236

6

Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials.

Huang Y, Sutter E, Shi NN, Zheng J, Yang T, Englund D, Gao HJ, Sutter P. Huang Y, et al. Among authors: gao hj. ACS Nano. 2015 Nov 24;9(11):10612-20. doi: 10.1021/acsnano.5b04258. Epub 2015 Sep 10. ACS Nano. 2015. PMID: 26336975

7

Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices.

Wang G, Bao L, Pei T, Ma R, Zhang YY, Sun L, Zhang G, Yang H, Li J, Gu C, Du S, Pantelides ST, Schrimpf RD, Gao HJ. Wang G, et al. Among authors: gao hj. Nano Lett. 2016 Nov 9;16(11):6870-6878. doi: 10.1021/acs.nanolett.6b02704. Epub 2016 Oct 31. Nano Lett. 2016. PMID: 27786486

8

Upgrade of a commercial four-probe scanning tunneling microscopy system.

Ma R, Huan Q, Wu L, Yan J, Zou Q, Wang A, Bobisch CA, Bao L, Gao HJ. Ma R, et al. Among authors: gao hj. Rev Sci Instrum. 2017 Jun;88(6):063704. doi: 10.1063/1.4986466. Rev Sci Instrum. 2017. PMID: 28668010

9

Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene.

Ma R, Huan Q, Wu L, Yan J, Guo W, Zhang YY, Wang S, Bao L, Liu Y, Du S, Pantelides ST, Gao HJ. Ma R, et al. Among authors: gao hj. Nano Lett. 2017 Sep 13;17(9):5291-5296. doi: 10.1021/acs.nanolett.7b01624. Epub 2017 Aug 14. Nano Lett. 2017. PMID: 28786680

10

Termination of Ge surfaces with ultrathin GeS and GeS₂ layers via solid-state sulfurization.

Chen H, Keiser C, Du S, Gao HJ, Sutter P, Sutter E. Chen H, et al. Among authors: gao hj. Phys Chem Chem Phys. 2017 Dec 13;19(48):32473-32480. doi: 10.1039/c7cp05990f. Phys Chem Chem Phys. 2017. PMID: 29188266

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