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Quantum conductance in silicon oxide resistive memory devices.
Mehonic A, Vrajitoarea A, Cueff S, Hudziak S, Howe H, Labbé C, Rizk R, Pepper M, Kenyon AJ. Mehonic A, et al. Among authors: cueff s. Sci Rep. 2013;3:2708. doi: 10.1038/srep02708. Sci Rep. 2013. PMID: 24048282 Free PMC article.
Unveiling the Enhancement of Spontaneous Emission at Exceptional Points.
Ferrier L, Bouteyre P, Pick A, Cueff S, Dang NHM, Diederichs C, Belarouci A, Benyattou T, Zhao JX, Su R, Xing J, Xiong Q, Nguyen HS. Ferrier L, et al. Among authors: cueff s. Phys Rev Lett. 2022 Aug 19;129(8):083602. doi: 10.1103/PhysRevLett.129.083602. Phys Rev Lett. 2022. PMID: 36053693
Electrically tailored resistance switching in silicon oxide.
Mehonic A, Cueff S, Wojdak M, Hudziak S, Labbé C, Rizk R, Kenyon AJ. Mehonic A, et al. Among authors: cueff s. Nanotechnology. 2012 Nov 16;23(45):455201. doi: 10.1088/0957-4484/23/45/455201. Epub 2012 Oct 12. Nanotechnology. 2012. PMID: 23064085
19 results