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Minimum Resistance Anisotropy of Epitaxial Graphene on SiC.
ACS Appl Mater Interfaces. 2018 Feb 14;10(6):6039-6045. doi: 10.1021/acsami.7b18641. Epub 2018 Feb 5.
ACS Appl Mater Interfaces. 2018.
PMID: 29377673
High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates.
Aprojanz J, Rosenzweig P, Nguyen TTN, Karakachian H, Küster K, Starke U, Lukosius M, Lippert G, Sinterhauf A, Wenderoth M, Zakharov AA, Tegenkamp C.
Aprojanz J, et al. Among authors: sinterhauf a.
ACS Appl Mater Interfaces. 2020 Sep 23;12(38):43065-43072. doi: 10.1021/acsami.0c10725. Epub 2020 Sep 14.
ACS Appl Mater Interfaces. 2020.
PMID: 32865383
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Substrate induced nanoscale resistance variation in epitaxial graphene.
Sinterhauf A, Traeger GA, Momeni Pakdehi D, Schädlich P, Willke P, Speck F, Seyller T, Tegenkamp C, Pierz K, Schumacher HW, Wenderoth M.
Sinterhauf A, et al.
Nat Commun. 2020 Jan 28;11(1):555. doi: 10.1038/s41467-019-14192-0.
Nat Commun. 2020.
PMID: 31992696
Free PMC article.
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Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic, and Transport Properties.
Willke P, Amani JA, Sinterhauf A, Thakur S, Kotzott T, Druga T, Weikert S, Maiti K, Hofsäss H, Wenderoth M.
Willke P, et al. Among authors: sinterhauf a.
Nano Lett. 2015 Aug 12;15(8):5110-5. doi: 10.1021/acs.nanolett.5b01280. Epub 2015 Jul 2.
Nano Lett. 2015.
PMID: 26120803
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