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Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature.
Sci Rep. 2017 Oct 26;7(1):14146. doi: 10.1038/s41598-017-14291-2.
Sci Rep. 2017.
PMID: 29074890
Free PMC article.
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling.
Heo S, Park H, Ko DS, Kim YS, Kyoung YK, Lee HI, Cho E, Lee HS, Park GS, Shin JK, Lee D, Lee J, Jung K, Jeong M, Yamada S, Kang HJ, Choi BD.
Heo S, et al. Among authors: kyoung yk.
Sci Rep. 2017 Mar 2;7:43561. doi: 10.1038/srep43561.
Sci Rep. 2017.
PMID: 28252013
Free PMC article.
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Effects of interfacial layer on characteristics of TiN/ZrO2 structures.
Kim Y, Kang SY, Choi JH, Lim JS, Park MY, Chung SJ, Chung J, Lee HI, Kim KH, Kyoung YK, Heo S, Yoo CY, Kang HK.
Kim Y, et al. Among authors: kyoung yk.
J Nanosci Nanotechnol. 2011 Sep;11(9):8309-12. doi: 10.1166/jnn.2011.5043.
J Nanosci Nanotechnol. 2011.
PMID: 22097574
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Protective Oxide Coating for Ionic Conductive Solid Electrolyte Interphase.
Kim YS, Kim SH, Kim G, Heo S, Mun J, Han S, Jung H, Kyoung YK, Yun DJ, Baek WJ, Doo S.
Kim YS, et al. Among authors: kyoung yk.
ACS Appl Mater Interfaces. 2016 Nov 16;8(45):30980-30984. doi: 10.1021/acsami.6b10934. Epub 2016 Nov 7.
ACS Appl Mater Interfaces. 2016.
PMID: 27787978
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