Amani M - Search Results

1

Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.

Park JH, Sanne A, Guo Y, Amani M, Zhang K, Movva HCP, Robinson JA, Javey A, Robertson J, Banerjee SK, Kummel AC. Park JH, et al. Among authors: amani m. Sci Adv. 2017 Oct 20;3(10):e1701661. doi: 10.1126/sciadv.1701661. eCollection 2017 Oct. Sci Adv. 2017. PMID: 29062892 Free PMC article.

2

Highly Stable Near-Unity Photoluminescence Yield in Monolayer MoS₂ by Fluoropolymer Encapsulation and Superacid Treatment.

Kim H, Lien DH, Amani M, Ager JW, Javey A. Kim H, et al. Among authors: amani m. ACS Nano. 2017 May 23;11(5):5179-5185. doi: 10.1021/acsnano.7b02521. Epub 2017 May 8. ACS Nano. 2017. PMID: 28467698

3

Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts.

Kim TY, Amani M, Ahn GH, Song Y, Javey A, Chung S, Lee T. Kim TY, et al. Among authors: amani m. ACS Nano. 2016 Feb 23;10(2):2819-26. doi: 10.1021/acsnano.5b07942. Epub 2016 Feb 1. ACS Nano. 2016. PMID: 26820160

4

Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides.

Amani M, Taheri P, Addou R, Ahn GH, Kiriya D, Lien DH, Ager JW 3rd, Wallace RM, Javey A. Amani M, et al. Nano Lett. 2016 Apr 13;16(4):2786-91. doi: 10.1021/acs.nanolett.6b00536. Epub 2016 Mar 21. Nano Lett. 2016. PMID: 26978038

5

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors.

Lien DH, Uddin SZ, Yeh M, Amani M, Kim H, Ager JW 3rd, Yablonovitch E, Javey A. Lien DH, et al. Among authors: amani m. Science. 2019 May 3;364(6439):468-471. doi: 10.1126/science.aaw8053. Science. 2019. PMID: 31048488 Free article.

6

Analysis of the interface characteristics of CVD-grown monolayer MoS₂ by noise measurements.

Kim TY, Song Y, Cho K, Amani M, Ho Ahn G, Kim JK, Pak J, Chung S, Javey A, Lee T. Kim TY, et al. Among authors: amani m. Nanotechnology. 2017 Apr 7;28(14):145702. doi: 10.1088/1361-6528/aa60f9. Epub 2017 Mar 9. Nanotechnology. 2017. PMID: 28276342

7

Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys.

Amani M, Regan E, Bullock J, Ahn GH, Javey A. Amani M, et al. ACS Nano. 2017 Nov 28;11(11):11724-11731. doi: 10.1021/acsnano.7b07028. Epub 2017 Nov 8. ACS Nano. 2017. PMID: 29087684 Free article.

8

Large-area and bright pulsed electroluminescence in monolayer semiconductors.

Lien DH, Amani M, Desai SB, Ahn GH, Han K, He JH, Ager JW 3rd, Wu MC, Javey A. Lien DH, et al. Among authors: amani m. Nat Commun. 2018 Mar 26;9(1):1229. doi: 10.1038/s41467-018-03218-8. Nat Commun. 2018. PMID: 29581419 Free PMC article.

9

Synthetic WSe₂ monolayers with high photoluminescence quantum yield.

Kim H, Ahn GH, Cho J, Amani M, Mastandrea JP, Groschner CK, Lien DH, Zhao Y, Ager JW 3rd, Scott MC, Chrzan DC, Javey A. Kim H, et al. Among authors: amani m. Sci Adv. 2019 Jan 4;5(1):eaau4728. doi: 10.1126/sciadv.aau4728. eCollection 2019 Jan. Sci Adv. 2019. PMID: 30613771 Free PMC article.

10

High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites.

Sutter-Fella CM, Li Y, Amani M, Ager JW 3rd, Toma FM, Yablonovitch E, Sharp ID, Javey A. Sutter-Fella CM, et al. Among authors: amani m. Nano Lett. 2016 Jan 13;16(1):800-6. doi: 10.1021/acs.nanolett.5b04884. Epub 2015 Dec 28. Nano Lett. 2016. PMID: 26691065 Free article.

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