Skowronski M - Search Results

1

Scaling behavior of oxide-based electrothermal threshold switching devices.

Li D, Goodwill JM, Bain JA, Skowronski M. Li D, et al. Among authors: skowronski m. Nanoscale. 2017 Sep 28;9(37):14139-14148. doi: 10.1039/c7nr03865h. Nanoscale. 2017. PMID: 28905051

2

In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO₂.

Kamaladasa RJ, Sharma AA, Lai YT, Chen W, Salvador PA, Bain JA, Skowronski M, Picard YN. Kamaladasa RJ, et al. Among authors: skowronski m. Microsc Microanal. 2015 Feb;21(1):140-53. doi: 10.1017/S1431927614013555. Epub 2014 Dec 22. Microsc Microanal. 2015. PMID: 25529361

3

Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

Li D, Sharma AA, Gala DK, Shukla N, Paik H, Datta S, Schlom DG, Bain JA, Skowronski M. Li D, et al. Among authors: skowronski m. ACS Appl Mater Interfaces. 2016 May 25;8(20):12908-14. doi: 10.1021/acsami.6b03501. Epub 2016 May 10. ACS Appl Mater Interfaces. 2016. PMID: 27136956

4

Transient Thermometry and High-Resolution Transmission Electron Microscopy Analysis of Filamentary Resistive Switches.

Kwon J, Sharma AA, Chen CY, Fantini A, Jurczak M, Herzing AA, Bain JA, Picard YN, Skowronski M. Kwon J, et al. Among authors: skowronski m. ACS Appl Mater Interfaces. 2016 Aug 10;8(31):20176-84. doi: 10.1021/acsami.6b05034. Epub 2016 Jul 26. ACS Appl Mater Interfaces. 2016. PMID: 27351065

5

Electro-Thermal Model of Threshold Switching in TaO_x-Based Devices.

Goodwill JM, Sharma AA, Li D, Bain JA, Skowronski M. Goodwill JM, et al. Among authors: skowronski m. ACS Appl Mater Interfaces. 2017 Apr 5;9(13):11704-11710. doi: 10.1021/acsami.6b16559. Epub 2017 Mar 21. ACS Appl Mater Interfaces. 2017. PMID: 28293945

6

ON-state evolution in lateral and vertical VO₂ threshold switching devices.

Li D, Sharma AA, Shukla N, Paik H, Goodwill JM, Datta S, Schlom DG, Bain JA, Skowronski M. Li D, et al. Among authors: skowronski m. Nanotechnology. 2017 Oct 6;28(40):405201. doi: 10.1088/1361-6528/aa882f. Epub 2017 Aug 24. Nanotechnology. 2017. PMID: 28836505

7

Formation of the Conducting Filament in TaO _x-Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation.

Ma Y, Li D, Herzing AA, Cullen DA, Sneed BT, More KL, Nuhfer NT, Bain JA, Skowronski M. Ma Y, et al. Among authors: skowronski m. ACS Appl Mater Interfaces. 2018 Jul 11;10(27):23187-23197. doi: 10.1021/acsami.8b03726. Epub 2018 Jun 29. ACS Appl Mater Interfaces. 2018. PMID: 29912544

8

Spontaneous current constriction in threshold switching devices.

Goodwill JM, Ramer G, Li D, Hoskins BD, Pavlidis G, McClelland JJ, Centrone A, Bain JA, Skowronski M. Goodwill JM, et al. Among authors: skowronski m. Nat Commun. 2019 Apr 9;10(1):1628. doi: 10.1038/s41467-019-09679-9. Nat Commun. 2019. PMID: 30967535 Free PMC article.

9

Exchange of Ions across the TiN/TaO_x Interface during Electroformation of TaO_x-Based Resistive Switching Devices.

Ma Y, Cullen DA, Goodwill JM, Xu Q, More KL, Skowronski M. Ma Y, et al. Among authors: skowronski m. ACS Appl Mater Interfaces. 2020 Jun 17;12(24):27378-27385. doi: 10.1021/acsami.0c06960. Epub 2020 Jun 4. ACS Appl Mater Interfaces. 2020. PMID: 32441092

10

Temperature Distribution in TaO _x Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy.

Meng J, Goodwill JM, Strelcov E, Bao K, McClelland JJ, Skowronski M. Meng J, et al. Among authors: skowronski m. ACS Appl Electron Mater. 2023 Apr 10;5(4):2414-2421. doi: 10.1021/acsaelm.3c00229. eCollection 2023 Apr 25. ACS Appl Electron Mater. 2023. PMID: 37124236 Free PMC article.

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