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Three-fold Symmetric Doping Mechanism in GaAs Nanowires.
Dastjerdi MHT, Fiordaliso EM, Leshchenko ED, Akhtari-Zavareh A, Kasama T, Aagesen M, Dubrovskii VG, LaPierre RR. Dastjerdi MHT, et al. Among authors: lapierre rr. Nano Lett. 2017 Oct 11;17(10):5875-5882. doi: 10.1021/acs.nanolett.7b00794. Epub 2017 Sep 20. Nano Lett. 2017. PMID: 28903563
Multiple quantum well AlGaAs nanowires.
Chen C, Braidy N, Couteau C, Fradin C, Weihs G, LaPierre R. Chen C, et al. Nano Lett. 2008 Feb;8(2):495-9. doi: 10.1021/nl0726306. Epub 2008 Jan 10. Nano Lett. 2008. PMID: 18184023
Tuning the morphology of self-assisted GaP nanowires.
Leshchenko ED, Kuyanov P, LaPierre RR, Dubrovskii VG. Leshchenko ED, et al. Among authors: lapierre rr. Nanotechnology. 2018 Jun 1;29(22):225603. doi: 10.1088/1361-6528/aab47b. Epub 2018 Mar 6. Nanotechnology. 2018. PMID: 29509146
Doping assessment in GaAs nanowires.
Goktas NI, Fiordaliso EM, LaPierre RR. Goktas NI, et al. Among authors: lapierre rr. Nanotechnology. 2018 Jun 8;29(23):234001. doi: 10.1088/1361-6528/aab6f1. Epub 2018 Mar 15. Nanotechnology. 2018. PMID: 29543595
GaP nanowire betavoltaic device.
McNamee S, Wagner D, Fiordaliso EM, Novog D, LaPierre RR. McNamee S, et al. Among authors: lapierre rr. Nanotechnology. 2019 Feb 15;30(7):075401. doi: 10.1088/1361-6528/aaf30a. Epub 2018 Nov 22. Nanotechnology. 2019. PMID: 30524113
59 results